Fabrication, characterization, and photocatalytic performance of ternary cadmium chalcogenides CdIn2S4 and Cd7.23Zn2.77S10-ZnS thin films

IF 1.8 3区化学 Q3 CHEMISTRY, INORGANIC & NUCLEAR

Main Group Metal Chemistry Pub Date : 2021-01-01 DOI:10.1515/mgmc-2021-0008

U. Daraz, T. Ansari, Shafique Ahmad Arain, M. Mansoor, M. Mazhar, F. Hussain

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引用次数: 2

Abstract

Abstract Dithiocarbamate complexes [Cd(S2CNCy2)2(py)] (1), [In(S2CNCy2)3]·2py (2) and [Zn(S2CNCy2)2(py)] (3) were synthesized and toluene solution of (1) and (2) was used as dual source precursor for the synthesis of CdIn2S4 (CIS), while that of (1) and (3) was applied for the deposition of Cd7.23Zn2.77S10–ZnS composite (CZS-ZS) thin film photoan-odes by employing single step aerosol assisted chemical vapor deposition (AACVD) technique. Deposition experiments were performed at 500°C under an inert ambient of argon gas. The structural properties of deposited films were evaluated by using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The field emission scanning electron microscopy (FESEM) exposed surface morphologies while UV-Visible spectrophotometry revealed that CIS is low band gap photoanode in comparison to CZS-ZS. The comparison of photoelectrochemical (PEC) responses measured in identical conditions in terms of linear sweep voltammetry (LSV) depicts photocurrent density of 4.4 mA /cm2 and 2.9 mA/cm2 at applied potential of 0.7 V under solar light intensity of 100 mW/cm2 for CIS and CZS-ZS respectively. Further, electrochemical impedance spectroscopy (EIS) confirms that PEC properties of CIS are superior to CZS-ZS photoanode as the former offer less charge transfer resistance (Rct) 0.03 MΩ in comparison to CZS-ZS having Rct value of 0.06 MΩ.

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三元镉硫系化合物CdIn2S4和Cd7.23Zn2.77S10-ZnS薄膜的制备、表征及光催化性能

摘要合成了二硫代氨基甲酸酯配合物[Cd(S2CNCy2)2(py)](1)、[In(S2CNCy2)3]·2py(2)和[Zn(S2CNCy2)2(py)](3)，并以(1)和(2)的甲苯溶液作为双源前驱体合成CdIn2S4 (CIS)，采用单步气溶胶辅助化学气相沉积(AACVD)技术将(1)和(3)的甲苯溶液用于沉积Cd7.23Zn2.77S10-ZnS复合材料(cjs - zs)薄膜光电二极管。沉积实验在500℃氩气惰性环境下进行。采用x射线衍射(XRD)、能量色散x射线能谱(EDX)、x射线光电子能谱(XPS)和拉曼光谱对沉积膜的结构性能进行了评价。场发射扫描电镜(FESEM)和紫外可见分光光度法显示CIS是低带隙光阳极。在相同条件下，用线性扫描伏安法(LSV)测量的电化学(PEC)响应比较表明，在100 mW/cm2的太阳光强下，CIS和cjs - zs在0.7 V的施加电位下的光电流密度分别为4.4 mA/cm2和2.9 mA/cm2。此外，电化学阻抗谱(EIS)证实了CIS的PEC性能优于cts - zs光阳极，因为前者的电荷转移电阻(Rct)小于cts - zs, Rct值为0.03 MΩ，而cts - zs的Rct值为0.06 MΩ。

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来源期刊

Main Group Metal Chemistry CHEMISTRY, INORGANIC & NUCLEAR-CHEMISTRY, ORGANIC

CiteScore

4.10

自引率

27.80%

发文量

审稿时长

4 weeks

期刊介绍： This journal is committed to the publication of short communications, original research, and review articles within the field of main group metal and semi-metal chemistry, Main Group Metal Chemistry is an open-access, peer-reviewed journal that publishes in ongoing way. Papers addressing the theoretical, spectroscopic, mechanistic and synthetic aspects of inorganic, coordination and organometallic main group metal and semi-metal compounds, including zinc, cadmium and mercury are welcome. The journal also publishes studies relating to environmental aspects of these metals, their toxicology, release pathways and fate. Articles on the applications of main group metal chemistry, including in the fields of polymer chemistry, agriculture, electronics and catalysis, are also accepted.