Monitoring ON-Resistance of MOSFET Devices in Real Time for SVPWM-VSI With Direct Compensation

IF 1.7 Q2 Engineering

Canadian Journal of Electrical and Computer Engineering-Revue Canadienne De Genie Electrique et Informatique Pub Date : 2018-04-19 DOI:10.1109/CJECE.2017.2785780

Yongkeun Lee, Jongkwan Kim

{"title":"Monitoring ON-Resistance of MOSFET Devices in Real Time for SVPWM-VSI With Direct Compensation","authors":"Yongkeun Lee, Jongkwan Kim","doi":"10.1109/CJECE.2017.2785780","DOIUrl":null,"url":null,"abstract":"One of the major causes for the operation failure and/or malfunction in a voltage source inverter is from power semiconductor devices, such as MOSFET and IGBT. Especially, under harsh operating environments, the power devices face various mechanical/thermal challenges, which can increase the equipment/device failure rate and cause unexpected interruptions and/or serious safety issues. This paper focuses on estimating the ON-resistance of the MOSFET/IGBT devices in real time while operating in space-vector pulsewidth modulation mode to monitor the status on power MOSFET/IGBT devices in real time, hoping that it can avoid those unexpected interruptions for safety. Since the increase in ON-resistance of the power MOSFET is identified as the fault signature, it is worthwhile to measure ON-resistance to prevent the output voltage distortions and the amplitude reduction from the set reference voltage in advance.","PeriodicalId":55287,"journal":{"name":"Canadian Journal of Electrical and Computer Engineering-Revue Canadienne De Genie Electrique et Informatique","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2018-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/CJECE.2017.2785780","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Canadian Journal of Electrical and Computer Engineering-Revue Canadienne De Genie Electrique et Informatique","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CJECE.2017.2785780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 2

Abstract

One of the major causes for the operation failure and/or malfunction in a voltage source inverter is from power semiconductor devices, such as MOSFET and IGBT. Especially, under harsh operating environments, the power devices face various mechanical/thermal challenges, which can increase the equipment/device failure rate and cause unexpected interruptions and/or serious safety issues. This paper focuses on estimating the ON-resistance of the MOSFET/IGBT devices in real time while operating in space-vector pulsewidth modulation mode to monitor the status on power MOSFET/IGBT devices in real time, hoping that it can avoid those unexpected interruptions for safety. Since the increase in ON-resistance of the power MOSFET is identified as the fault signature, it is worthwhile to measure ON-resistance to prevent the output voltage distortions and the amplitude reduction from the set reference voltage in advance.

查看原文本刊更多论文

SVPWM-VSI直接补偿MOSFET器件导通电阻的实时监测

电压源逆变器中的操作故障和/或故障的主要原因之一来自功率半导体器件，例如MOSFET和IGBT。特别是，在恶劣的操作环境下，电力设备面临各种机械/热挑战，这可能会增加设备/设备的故障率，并导致意外中断和/或严重的安全问题。本文重点研究了在空间矢量脉宽调制模式下工作的MOSFET/IIGBT器件的导通电阻的实时估计，以实时监测功率MOSFET/IIGBT的状态，希望能避免这些意外的中断，以确保安全。由于功率MOSFET的导通电阻的增加被识别为故障特征，因此有必要测量导通电阻以预先防止输出电压失真和从设置的参考电压的幅度减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Canadian Journal of Electrical and Computer Engineering-Revue Canadienne De Genie Electrique et Informatique 工程技术-工程：电子与电气

自引率

0.00%

发文量

期刊介绍： The Canadian Journal of Electrical and Computer Engineering (ISSN-0840-8688), issued quarterly, has been publishing high-quality refereed scientific papers in all areas of electrical and computer engineering since 1976