Charge Induced Chi(3) Susceptibility in Interfacial Nonlinear Optical Spectroscopy Beyond the Bulk Aqueous Contributions: The Case for Silica/Water Interface

Hui Wang, Xiao-Hua Hu, Hongfei Wang
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引用次数: 9

Abstract

The electric field induced (EFI) bulk Chi(3) contribution to the second harmonic generation (SHG) signal from charged interfaces was discovered and applied to study the interfacial chemistry of various charged interfaces three decades ago. For both the buried fused silica/water interface and the exposed charged monolayer covered air/water interface, such bulk Chi(3) contribution was all attributed to the Chi(3) term of the polarized water molecules near the charged interfaces. The puzzling experimental observation of the more than one-order of magnitude difference of the EFISHG intensity between the fully charged silica/water interface and the charged molecular covered air/water interface was generally overlooked in the EFISHG literature. Nevertheless, this significant signal difference suggests additional source for the Chi(3) contribution at the fully charged silica/water interface other than the polarized water molecules as in the case of charged monolayer covered air/water interface. In this report, we re-examine the treatment of the Chi(3) mechanism at the charged silica/water interface by including the contributions from the bulk silica using proper boundary condition and image charge distributions for the change screening effects inside bulk silica phase. We show that the Chi(3) contribution from the bulk silica is in similar form as that of the aqueous bulk phase, and it is with more than one-order of magnitude and with opposite sign. The treatment reported here can be extended to other charged interfaces.
体积水贡献之外的界面非线性光学光谱中电荷诱导的Chi(3)磁化率:二氧化硅/水界面的情况
三十年前,电场诱导(EFI)体Chi(3)对带电界面二次谐波产生(SHG)信号的贡献被发现并应用于研究各种带电界面的界面化学。对于掩埋的熔融二氧化硅/水界面和暴露的带电单层覆盖的空气/水界面,这种整体Chi(3)贡献都归因于带电界面附近极化水分子的Chi(三)项。在EFISHG文献中,通常忽略了对完全带电的二氧化硅/水界面和带电分子覆盖的空气/水界面之间EFISHG强度超过一个数量级差异的令人困惑的实验观察。然而,这种显著的信号差异表明,在充满电的二氧化硅/水界面处,除了极化的水分子之外,Chi(3)贡献的额外来源,如在带电单层覆盖的空气/水界面的情况下。在本报告中,我们重新审查了Chi(3)机制在带电二氧化硅/水界面的处理,通过使用适当的边界条件和图像电荷分布来包括体相二氧化硅对体相二氧化硅内变化屏蔽效应的贡献。我们发现,体相二氧化硅对Chi(3)的贡献与水性体相的贡献形式相似,并且具有一个以上的数量级和相反的符号。本文报道的处理可以扩展到其他带电界面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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