High-performance tandem CdSe/ZnS quantum-dot light-emitting diodes with a double-layer interconnecting layer composed of thermally evaporated and sputtered metal oxides

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
O. Kwon, Dongjin Kim, Mijin Kim, Honyeon Lee
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引用次数: 5

Abstract

High-performance tandem quantum-dot light-emitting diodes (QLEDs) are needed for practical next-generation displays. This study designed a high-performance interconnecting layer (ICL) that combines QLED units into tandem QLEDs and demonstrated its effectiveness. The ICLs were designed for charge generation, for interconnecting QLEDs, and for protecting the underlayers from damage during upper-layer fabrication. Using the ICLs with a first layer of thermally evaporated WO3 and a second layer of sputtered SnO2 or zinc tin oxide, the required roles of the ICL were fulfilled. The current efficiencies of tandem QLEDs using a double-layer ICL were about triple those of a single QLED, an improvement from 26 cd/A for a single QLED to 82 cd/A for a tandem QLED connecting two QLED units. This current efficiency was much higher than previously reported values for tandem QLEDs connecting QLED units with CdSe/ZnS green quantum dots and ZnO electron-transport layers. The method presented here will contribute to the practical application of QLEDs for large TVs and light-illumination devices.
具有由热蒸发和溅射金属氧化物组成的双层互连层的高性能串联CdSe/ZnS量子点发光二极管
高性能串联量子点发光二极管(qled)是实用的下一代显示器所必需的。本研究设计了一种将QLED单元串联在一起的高性能互连层(ICL),并证明了其有效性。icl设计用于电荷产生,互连qled,以及保护底层在上层制造过程中免受损坏。使用第一层热蒸发WO3,第二层溅射SnO2或锌锡氧化物的ICL,可以满足ICL所要求的作用。使用双层ICL的串联QLED的当前效率大约是单个QLED的三倍,从单个QLED的26 cd/ a提高到连接两个QLED单元的串联QLED的82 cd/ a。这种电流效率远高于先前报道的将QLED单元与CdSe/ZnS绿色量子点和ZnO电子传输层连接起来的串联QLED的值。本文提出的方法将有助于qled在大型电视和光照明设备上的实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
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