Effect of transition metal doping on the photoelectric structure of single layer NbS2 under defects

Abstract

Excellent semiconductors and novel optical properties are the first criteria for nanomaterial technology. In this paper, the S-atom defect is applied to 1T-NbS2 for the first time, and doping atoms are introduced. The concentration of doping atoms is 3.84% and 4% under the two types of defects. Finally, the metallic properties of NbS2 were weakened successfully, and the highest indirect band gap of 0.27[Formula: see text]eV was induced, which gradually transformed into a brand-new semiconductor material. In addition, partially composite systems exhibit excellent electromagnetic storage, polarizability, and infrared light absorption, showing high reflectivity in the visible and low-frequency UV regions, which can be used to make blackout lenses and reflective coatings. Cd composite systems can be used as a new type of conducting semiconductor for all kinds of equipment.