Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber

IF 4.703 3区材料科学

Nanoscale Research Letters Pub Date : 2023-06-16 DOI:10.1186/s11671-023-03865-x

Tadas Paulauskas, Vaidas Pačebutas, Viktorija Strazdienė, Andrejus Geižutis, Jan Devenson, Mindaugas Kamarauskas, Martynas Skapas, Rokas Kondrotas, Mantas Drazdys, Matas Rudzikas, Benjaminas Šebeka, Viliam Vretenár, Arūnas Krotkus

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引用次数: 2

Abstract

Group III–V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm² short-circuit current density. Device analysis identifies several routes to significantly improve the performance of the GaAsBi subcell and of the overall solar cell. This study is the first to report on multi-junctions incorporating GaAsBi and is an addition to the research on the use of bismuth-containing III–V alloys in photonic device applications.

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带有1.0 eV GaAsBi吸收体的三结太阳能电池性能评估

III-V族半导体多结太阳能电池以其无可比拟的功率转换效率和辐射硬度，广泛应用于聚光和空间光伏领域。为了进一步提高效率，新的器件架构依赖于比成熟的GaInP/InGaAs/Ge技术更好的带隙组合，Ge最好被1.0 eV子电池取代。在此，我们提出了一种薄膜三结太阳能电池AlGaAs/GaAs/GaAsBi与1.0 eV稀释铋。采用台阶级配的InGaAs缓冲层集成了高结晶质量的GaAsBi吸收体。采用分子束外延生长的太阳能电池在AM1.5G光谱、2.51 V开路电压和9.86 mA/cm2短路电流密度下的效率达到19.1%。器件分析确定了几种显著提高GaAsBi亚电池和整个太阳能电池性能的途径。这项研究首次报道了结合GaAsBi的多结，是对在光子器件应用中使用含铋III-V合金研究的补充。

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来源期刊

Nanoscale Research Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

15.00

自引率

0.00%

发文量

110

审稿时长

2.5 months

期刊介绍： Nanoscale Research Letters (NRL) provides an interdisciplinary forum for communication of scientific and technological advances in the creation and use of objects at the nanometer scale. NRL is the first nanotechnology journal from a major publisher to be published with Open Access.