Neoteric Design Power Sustained 3-Bit Asynchronous Counter Using CNFET Based MCML Topology

IF 0.5 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Ramsha Suhail, Pragya Srivastava, Richa Yadav, Richa Srivastava
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引用次数: 0

Abstract

. Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects and potential applications in Integrated Circuit (IC) industry. based implementations with rapid response and simul-taneous generation of complemented output is all set to become indispensable in nano regime industry. This paper attempts to optimize and address performance-based analysis of digital circuits namely NAND, D flipflop and 3-bit asynchronous counter by practicing MCML based implementation. These circuits are con-templated on four design parameters namely delay ( t p ), power (pwr), Power Delay Product (PDP) and Energy Delay Product (EDP). This research focuses on relative analysis and emanate a salient optimal application of Complementary Metal-Oxide-Semiconductor (CMOS) and Carbon Nanotube Field Effect Transistor (CNFET) based 3-bit asynchronous counter. In ad-dition to this, the two configurations of the MCML counter are then compared against applied V DD at 16-nm technology nodes using HSPICE simulator. CNFET based 3-bit MCML counter is observed to be much faster (9.75 × ), significant improvement in gross power dissipation (11.93 × ), material refinement in PDP and EDP (116.39 × and 1165 × ) re-spectively as compared to the conventional counterpart. Therefore, CNFET based implementations comes to the fore as resilient technology supporting high level integration in nano scale regime.
基于CNFET MCML拓扑结构的新型功率维持3位异步计数器设计
领先的数字电路,即寄存器、触发器、状态机和计数器,驱动集成电路(IC)行业的操作方面和潜在应用。具有快速响应和同时生成补充输出的基于实现将成为纳米体制工业中不可或缺的一部分。本文试图通过实践基于MCML的实现来优化和解决数字电路(即NAND、D触发器和3位异步计数器)的性能分析。这些电路以四个设计参数为模板,即延迟(tp)、功率(pwr)、功率延迟乘积(PDP)和能量延迟乘积(EDP)。本研究着重对互补金属氧化物半导体(CMOS)和碳纳米管场效应晶体管(CNFET)三位异步计数器进行了相关分析,并提出了一个显著的优化应用。除此之外,还使用HSPICE模拟器将MCML计数器的两种配置与16nm技术节点处应用的VDD进行比较。与传统计数器相比,基于CNFET的3位MCML计数器速度快得多(9.75倍),总功耗显著提高(11.93倍),PDP和EDP的材料细化(116.39倍和1165倍)。因此,基于CNFET的实现方式作为支持纳米级高水平集成的弹性技术而脱颖而出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advances in Electrical and Electronic Engineering
Advances in Electrical and Electronic Engineering ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
33.30%
发文量
30
审稿时长
25 weeks
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