43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO

Abstract

In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared with the use of low‐temperature polysilicon.