Chaojiong Wei, Youren Yu, Ziyun Wang, Lin Jiang, Z. Zeng, Jia Ye, X. Zou, W. Pan, Xiaojun Xie, Lian-shan Yan
{"title":"Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform","authors":"Chaojiong Wei, Youren Yu, Ziyun Wang, Lin Jiang, Z. Zeng, Jia Ye, X. Zou, W. Pan, Xiaojun Xie, Lian-shan Yan","doi":"10.37188/lam.2023.030","DOIUrl":null,"url":null,"abstract":"With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1550-nm wavelength. It is implemented on a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits.","PeriodicalId":56519,"journal":{"name":"光:先进制造(英文)","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"光:先进制造(英文)","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.37188/lam.2023.030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1550-nm wavelength. It is implemented on a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits.
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