Estimation of Fano factor for oversquare HPGe detector

M. Manohari, V. Sugumar, R. Mathiyarasu, B. Venkatraman
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Abstract

Fano factor is a quantity used to measure the departure of the observed variance in the number of charge carriers produced from that predicted using poison statistics. Fano factor varies with the detector type. In case of proportional counters and semiconductor detectors, it is substantially less than unity, whereas, for scintillator detectors, it would be unity. Even in case of semiconductor detectors, it varies with the type and the shape of the detector. Another source of fluctuations that gives the overall resolution of the detector is preamplifier noise. Oversquare coaxial HPGe detectors are a recent development in the field. Literature on the Fano factor of oversquare large volume coaxial detector is not available. In this work, the Fano factor and the electronic noise of an oversquare HPGe coaxial detector are estimated after optimizing the shaping parameters. The Fano factor for the oversquare HPGe detector is estimated as 0.1291 keV, which agrees with the ideal value of 0.13 by 99.98%. The preamplifier noise was found to be 0.048 keV which is 35% lesser than the reported value.
过平方HPGe探测器Fano因子的估计
法诺因子是一个用于测量观察到的电荷载流子数量变化与使用毒物统计预测的电荷载流子数变化的偏差的量。Fano因子随探测器类型而变化。在比例计数器和半导体探测器的情况下,它基本上小于单位,而对于闪烁体探测器,它将是单位。即使在半导体探测器的情况下,它也会随着探测器的类型和形状而变化。给出检测器整体分辨率的另一个波动源是前置放大器噪声。超方形同轴HPGe探测器是该领域的最新发展。关于过平方大体积同轴探测器的Fano因子的文献不可用。在本工作中,在优化成形参数后,估计了过平方HPGe同轴探测器的Fano因子和电子噪声。超平方HPGe探测器的Fano因子估计为0.1291keV,与0.13的理想值一致99.98%。前置放大器噪声为0.048keV,比报告值低35%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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