Breakdown Voltage Analysis in Quaternary InAlGaN High Electron Mobility Transistor of High-K Passivation Layer for High Power Applications

Abstract

The 2-Dimensional breakdown characteristics analysis in InAlGaN/GaN high electron mobility transistors (HEMTs) is implemented through including of donor and acceptor atoms inside the barrier layer. Thereby dependences of the relative permittivity εr and the thickness d of passivation layer on the breakdown voltage are related for the parametric analysis. When the relative permittivity εr increases duly affects the breakdown voltage by order of increases, owing to its electric field existence at the drain, there on resulting in εr upsurges. This occurs due to the properties of insulator with the applied voltage evenly drops uniformly. The inducing voltage drop alongside the heterostructure of materials InAlGaN/GaN develops flatter response on the drain terminal of the gate owing to its permittivity εr of higher order. The aforementioned breakdown voltage surges, since of the electric field nearby the drain has weakened as a owing to it thickness of passivating layer d, this resolute InAlGaN/GaN HEMTs of a high-k along with the thicker passivation layer has higher breakdown voltage.