A negative voltage generator with 4-stage configurable parallel switching for smart window film applications

Q3 Engineering
Chua-Chin Wang, L. K. Tolentino, Hsin-Che Wu, R. Sangalang, O. L. J. A. Jose, Tsung-Hsien Lin
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引用次数: 0

Abstract

ABSTRACT A negative voltage generator was developed that can be used in the drivers of smart window films (SWF), which have typical operating voltages of 8 to 10 V. It consists of four Negative Charge Pump (NCP) stages and a 4-phase non-overlapping Clock Generator (CG), where the 4 NCP stages are configurable by external digital signals. This generates a wide output voltage range necessary to control different SWF modes, such as opaque, transparent, and tinted modes. TSMC 0.18- m HV BCD (High-Voltage Bipolar-CMOS-DMOS) process was used to fabricate the proposed negative voltage generator on silicon. Measurement results demonstrate that at switching frequency (fsw) = 20 MHz, supplied voltage (VDD) = 4.5 V and Vin = GND, it generates a wide output voltage range of −3.9 to −14.0 V, achieving the widest voltage range among the prior works, which covers the required negative voltage range for SWF usage. The peak efficiency is measured on silicon to be 58.08% .
具有4级可配置并联开关的负电压发生器,适用于智能窗膜应用
摘要开发了一种可用于智能窗膜驱动器的负电压发生器,其典型工作电压为8-10 V.它由四个负电荷泵(NCP)级和一个4相非重叠时钟发生器(CG)组成,其中四个NCP级可通过外部数字信号进行配置。这产生了控制不同SWF模式所需的宽输出电压范围,例如不透明、透明和着色模式。采用TSMC 0.18-m高压BCD(High Voltage Bipolar CMOS-DMOS)工艺在硅上制备了所提出的负电压发生器。测量结果表明,在开关频率(fsw) = 20 MHz,供电电压(VDD) = 4.5 V和Vin = GND,它产生−3.9到−14.0的宽输出电压范围 V、 实现了现有工作中最宽的电压范围,覆盖了SWF使用所需的负电压范围。在硅上测得的峰值效率为58.08%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of Electronics Letters
International Journal of Electronics Letters Engineering-Electrical and Electronic Engineering
CiteScore
1.80
自引率
0.00%
发文量
42
期刊介绍: International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.
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