Thin-film electronics based on all-2D van der Waals heterostructures

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xinling Liu, Xiaoming Yang, Weihui Sang, Hai Huang, Wenwu Li, Yen‐Fu Lin, J. Chu
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引用次数: 2

Abstract

Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
基于全二维范德华异质结构的薄膜电子学
近年来,包括金属、半导体和绝缘体在内的二维(2D)层状材料受到了广泛的关注。2D材料层之间的弱范德华(vdW)相互作用使它们能够分离单层并以所需序列重新组装成人工2D vdW异质结构。这些组装的全二维vdW异质结构是制造下一代电子器件和光电子器件的有前途的平台。特别地,完全由2D层状材料组成的全2D vdW异质结构器件由于其自然厚度、原子尖锐的异质界面和优异的机械柔性而受到广泛关注。本文首先介绍了二维vdW异质结构及其制备方法。其次,综述了基于全二维vdW异质结构的场效应晶体管和光电探测器的最新进展。最后,我们讨论了基于全二维vdW异质结构的器件在实际应用中的一些挑战,并对薄膜电子的未来发展提供了个人观点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
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