Anisotropy of the surface energy of silicides of some metals

IF 0.4 Q4 PHYSICS, MULTIDISCIPLINARY
V. Yurov, V. Goncharenko, V. Oleshko, K. Makhanov
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Abstract

An empirical model of a solid surface is proposed in the article. The thickness of the surface layer is described in terms of one parameter – the atomic volume of an element or its compounds. Surface energy is also expressed through one parameter – the melting point of a chemical element or crystal. The model proposes equations that allow calculating the thickness of the surface layer and surface energy for each face of the crystal. As an example, calculations of these values are made for silicides of some metals with crystal structures of cubic, hexagonal and rhombic systems. For cubic silicides, the thickness of the surface layer is 3-9 nm, and the number of monolayers is 7-16. Studies of metal deposition on silicon faces have shown that silicon silicide is formed on the (111) face, which has the highest surface energy. The reaction on the (100) face occurs only on the oxidized surface. In hexagonal silicides, anisotropy is seen, both in the values of the thickness of the surface layer and in the values of the surface energy. For example, during the formation of chromium disilicide on the (111) face in the c direction, it was found that the sizes of the islands become larger than on the (001) face. The authors designate that the thickness of the surface layer and the specific surface energy for cubic, hexagonal, and rhombic crystals significantly differ from them. What is the difference? First, the difference between the atoms of chemical elements from the periodic table and their compounds depends, first of all, on their electronic structure, which forms this or that interaction potential. Secondly, the difference between cubic, hexagonal and rhombic crystals lies in their relationship with Poisson's ratio and Young's modulus, that is, on two material parameters. Third, the thickness of the surface layer between cubic, hexagonal, and rhombic crystals also differs in only one parameter – the atomic (molar) volume of the crystal. However, the analysis of all the patterns still needs to be carefully analyzed.
某些金属硅化物表面能的各向异性
本文提出了一个固体表面的经验模型。表面层的厚度用一个参数来描述——元素或其化合物的原子体积。表面能也通过一个参数表示——化学元素或晶体的熔点。该模型提出了允许计算晶体每个表面的表面层厚度和表面能的方程。例如,对具有立方、六边形和菱形系统的晶体结构的一些金属的硅化物进行了这些值的计算。对于立方硅化物,表面层的厚度为3-9nm,单层的数量为7-16。对硅表面金属沉积的研究表明,硅化硅形成在具有最高表面能的(111)表面上。(100)面上的反应仅发生在氧化表面上。在六方硅化物中,在表面层的厚度值和表面能的值中都可以看到各向异性。例如,在c方向上在(111)面上形成二硅化铬的过程中,发现岛的尺寸变得大于(001)面上的尺寸。作者指出,立方晶体、六方晶体和菱形晶体的表面层厚度和比表面能与它们明显不同。有什么区别?首先,元素周期表中化学元素的原子与其化合物之间的差异首先取决于它们的电子结构,它形成了这种或那种相互作用势。其次,立方晶体、六方晶体和菱形晶体的区别在于它们与泊松比和杨氏模量的关系,即与两个材料参数的关系。第三,立方晶体、六方晶体和菱形晶体之间的表层厚度也只有一个参数不同——晶体的原子(摩尔)体积。然而,对所有模式的分析仍然需要仔细分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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