Study effect of incidence angle on ion implantation in ZnO matrix

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-07-05 DOI:10.15251/jor.2023.193.345

H. Aissania, K. Hami, A. Talhi

引用次数: 0

Abstract

The ion implantation method is one of the techniques used to dope the materials. The TRIM software (Transport and Range of Ions in Mater) created by Ziegler and colleagues [1] can simulate it. In this work, we studied the effect of incidence angles for different energies on the distribution of implant ions in the target by using the TRIM software, and several processes resulting from the interaction between Potassium ions and the target atoms are examined. Simulated physical effects are intriguing.

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研究入射角对ZnO基体中离子注入的影响

离子注入法是用于掺杂材料的技术之一。Ziegler及其同事[1]创建的TRIM软件（Mater中离子的传输和射程）可以模拟它。在这项工作中，我们使用TRIM软件研究了不同能量的入射角对目标中注入离子分布的影响，并考察了钾离子与目标原子相互作用产生的几个过程。模拟的物理效应很有趣。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.