AlGaN-Based Deep-Ultraviolet Laser Diodes with Quaternary AlInGaN Last Quantum Barrier

Pub Date : 2023-07-13 DOI:10.1007/s10946-023-10139-5

Mengshuang Yin, Aoxiang Zhang, Xien Sang, Yuan Xu, Fang Wang, Juin J. Lion, Yuhuai Liu

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Abstract

We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here, we investigate three LQB structures – Al_0.63In_0.03Ga_0.34N LQB, Al_0.65In_0.03Ga_0.32N LQ band, and Al_0.68In_0.03Ga_0.29N LQB. We find that the Al_0.68In_0.03Ga_0.29N LQB structure significantly reduces the electron leakage in the p-region, improves the carrier injection efficiency in the active region, and increases the stimulated radiation recombination rate of the DUV LDs. The simulation results indicate that the threshold current and threshold voltage decrease from 50.93 mA and 4.70 V for the Al_0.63In_0.03Ga_0.34N LQB structure to 42.47 mA and 4.63 V for the Al_0.68In_0.03Ga_0.29N LQB structure, respectively. At an injection current of 100 mA, the slope efficiency increases to 1.12 W/A. Compared with the conventional ternary AlGaN LQB structure, the quaternary AlInGaN LQB structure significantly improves the performance of the DUV LDs, which is crucial for the development of the DUV LDs.

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基于第四系AlInGaN末量子势垒的深紫外激光二极管

为了提高深紫外(DUV)激光二极管(ld)的性能，我们提出了一种四元AlInGaN末量子势垒(LQB)结构。本文研究了Al0.63In0.03Ga0.34N LQB、Al0.65In0.03Ga0.32N LQ波段和Al0.68In0.03Ga0.29N LQB三种LQB结构。我们发现Al0.68In0.03Ga0.29N LQB结构显著降低了p区电子泄漏，提高了活性区载流子注入效率，提高了DUV ld的受激辐射复合率。仿真结果表明，Al0.63In0.03Ga0.34N LQB结构的阈值电流和阈值电压分别从50.93 mA和4.70 V降低到42.47 mA和4.63 V。注入电流为100 mA时，斜率效率增加到1.12 W/A。与传统的三元AlInGaN LQB结构相比，四元AlInGaN LQB结构显著提高了DUV ld的性能，这对DUV ld的发展至关重要。

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