Ti/Al/Ti干法刻蚀工艺中BCl 3 气体作用研究

IF 0.7 4区物理与天体物理 Q3 CRYSTALLOGRAPHY

液晶与显示 Pub Date : 2019-09-05 DOI:10.3788/YJYXS20193409.0857

李知勋陈兵刘杰吴国特苗占成李淳东

引用次数: 0

Abstract

随着显示技术的发展，Ti/Al/Ti材料需求的厚度越来越厚，布线越来越窄。目前LTPS显示技术中常规的设计为Ti/Al/Ti材料衬底使用无机膜，后续柔性OLED显示技术新设计中Ti/Al/Ti衬底开始逐渐使用有机膜（聚酰亚胺等），Ti/Al/Ti干法刻蚀工艺面临的挑战越来越大。本文主要研究在常规Ti/Al/Ti干法刻蚀工艺中，BCl3气体对Ti/Al/Ti侧面形态的影响以及对光刻胶刻蚀速率的影响，实验结果表明：随着BCl3气体流量的增加，Ti/Al/Ti侧面保护膜的厚度越来越薄，对PR胶的刻蚀速率越来越小。本文研究结果便于更好地应对后续Ti/Al/Ti干法刻蚀衬底为有机膜的新工艺。

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Study on the Effect of BCl 3 Gas in Ti/Al/Ti Dry Etching Process

With the development of display technology, the thickness required for Ti/Al/Ti materials is becoming thicker and the wiring is becoming narrower. At present, the conventional design in LTPS display technology is to use inorganic films on Ti/Al/Ti material substrates. In the new design of flexible OLED display technology, Ti/Al/Ti substrates gradually use organic films (polyimide, etc.), and the challenges faced by Ti/Al/Ti dry etching process are becoming increasingly significant. This article mainly studies the effect of BCl3 gas on the morphology of Ti/Al/Ti side profile and the etching rate of photoresist in conventional Ti/Al/Ti dry etching process. The experimental results show that as the BCl3 gas flow rate increases, the thickness of Ti/Al/Ti side protective film becomes thinner and the etching rate of PR adhesive decreases. The research results of this article facilitate a better response to the new process of Ti/Al/Ti dry etching of organic films as substrates.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

液晶与显示 CRYSTALLOGRAPHY-

CiteScore

1.40

自引率

50.00%

发文量

4939

期刊介绍：