A 261mV Bandgap reference based on Beta Multiplier with 64ppm/0C temp coefficient

Q3 Engineering
R. Nagulapalli, N. Yassine, S. Barker, P. Georgiou, K. Hayatleh
{"title":"A 261mV Bandgap reference based on Beta Multiplier with 64ppm/0C temp coefficient","authors":"R. Nagulapalli, N. Yassine, S. Barker, P. Georgiou, K. Hayatleh","doi":"10.1080/21681724.2021.1966656","DOIUrl":null,"url":null,"abstract":"ABSTRACT In this paper, a low voltage bandgap reference circuit has been proposed. The introduction of a modified beta multiplier bias circuit decreased the mismatch caused by the PMOS transistors opamp contribution. By shifting the fixed resistors to the NMOSs drain side, the beta multiplier bias minimised threshold mismatch between the two NMOS transistors. A 200-point MC simulation showed a 0.9 mV standard deviation, with a 0.34% accuracy. The simulated temperature coefficient was 64 ppm/0C. The proposed circuit consumed 5.04 µW of power from a 0.45 V power supply voltage. A prototype was implemented in 65 nm CMOS technology occupying a 2888 µm2 silicon area, with the nominal value of the reference at 261 mV.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"10 1","pages":"403 - 413"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/21681724.2021.1966656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 10

Abstract

ABSTRACT In this paper, a low voltage bandgap reference circuit has been proposed. The introduction of a modified beta multiplier bias circuit decreased the mismatch caused by the PMOS transistors opamp contribution. By shifting the fixed resistors to the NMOSs drain side, the beta multiplier bias minimised threshold mismatch between the two NMOS transistors. A 200-point MC simulation showed a 0.9 mV standard deviation, with a 0.34% accuracy. The simulated temperature coefficient was 64 ppm/0C. The proposed circuit consumed 5.04 µW of power from a 0.45 V power supply voltage. A prototype was implemented in 65 nm CMOS technology occupying a 2888 µm2 silicon area, with the nominal value of the reference at 261 mV.
基于64ppm/0C温度系数的Beta倍增器的261mV带隙参考
本文提出了一种低压带隙基准电路。改进的β乘法器偏置电路的引入减少了PMOS晶体管运算放大器贡献引起的失配。通过将固定电阻器移位到NMOS漏极侧,β乘法器偏置最小化了两个NMOS晶体管之间的阈值失配。200点MC模拟显示0.9 mV的标准偏差,准确率为0.34%。模拟温度系数为64ppm/0C。所提出的电路消耗了0.45 V电源电压下5.04µW的功率。原型采用65 nm CMOS技术实现,占据2888µm2的硅面积,参考的标称值为261 mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
International Journal of Electronics Letters
International Journal of Electronics Letters Engineering-Electrical and Electronic Engineering
CiteScore
1.80
自引率
0.00%
发文量
42
期刊介绍: International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信