Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

IF 2.7

Nanotechnology and Precision Engineering Pub Date : 2020-12-01 DOI:10.1016/j.npe.2020.11.003

Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang

{"title":"Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser","authors":"Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang","doi":"10.1016/j.npe.2020.11.003","DOIUrl":null,"url":null,"abstract":"<div>Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of VSi in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of VSi were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the VSi formation was analyzed, and the three-dimensional distribution of VSi defects in the fs laser writing of 4H-SiC was established.</div>","PeriodicalId":87330,"journal":{"name":"Nanotechnology and Precision Engineering","volume":"3 4","pages":"Pages 218-228"},"PeriodicalIF":2.7000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2589554020300386/pdfft?md5=ab855e0159fceaf29f83c7cb62ca47b8&pid=1-s2.0-S2589554020300386-main.pdf","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology and Precision Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589554020300386","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

Abstract

Silicon-vacancy (V_Si) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of V_Si in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of V_Si were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the V_Si formation was analyzed, and the three-dimensional distribution of V_Si defects in the fs laser writing of 4H-SiC was established.

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飞秒激光制备4H-SiC中硅空位色中心的共聚焦光致发光特性

碳化硅(SiC)中的硅空位(VSi)中心有望用作固体量子比特，可用于量子计算和传感。飞秒激光写入作为一种新的可控色心制备方法，已逐渐应用于碳化硅中VSi的制备。在本研究中，4H-SiC由fs激光直接写入，并通过原子力显微镜、共聚焦光致发光(PL)和拉曼光谱在293 K下进行了表征。在785 nm激光激发下，采用深度剖面和二维映射的方法对VSi的PL信号进行了分析。分析了加工参数对VSi形成的影响，建立了fs激光刻蚀4H-SiC过程中VSi缺陷的三维分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanotechnology and Precision Engineering

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