The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance

IF 1.9 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Frontiers in electronics Pub Date : 2022-01-06 DOI:10.3389/felec.2021.786601

Federica Catania, Hugo de Souza Oliveira, M. C. Costa Angeli, M. Ciocca, S. Pané, N. Münzenrieder, G. Cantarella

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引用次数: 3

Abstract

Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) have proved promising features for flexible and lightweight electronics. To achieve technological maturity for commercial and industrial applications, their stability under extreme environmental conditions is highly required. The combined effects of temperature (T) from −30.0°C to 50.0°C and relative humidity (RH) stress from 0 to 95% on a-IGZO TFT is presented. The TFT performances and the parameters variation were analysed in two different experiments. First, the TFT response was extracted while undergoing the most extreme climate conditions on Earth, ranging from the African Desert (50.0°C, 22%) to Antarctic (−30.0°C, 0%). Afterwards, the device functionality was demonstrated in three parts of the human body (forehand, arm and foot) at low (35%), medium (60%) and high (95%) relative humidity for on-skin and wearable applications. The sensitivity to T/RH variations suggests the suitability of these TFTs as sensing element for epidermal electronics and artificial skin.

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气候条件和表皮定位对InGaZnO薄膜晶体管性能的影响

基于非晶铟镓锌氧化物（a-IGZO）的薄膜晶体管（TFT）已被证明具有柔性和轻型电子产品的良好特性。为了实现商业和工业应用的技术成熟，它们在极端环境条件下的稳定性是非常必要的。介绍了−30.0°C至50.0°C的温度（T）和0至95%的相对湿度（RH）应力对a-IGZO TFT的综合影响。在两个不同的实验中分析了TFT的性能和参数的变化。首先，TFT响应是在经历地球上最极端的气候条件时提取的，从非洲沙漠（50.0°C，22%）到南极（−30.0°C（0%））。之后，在人体的三个部位（正手、手臂和脚），在低（35%）、中（60%）和高（95%）相对湿度下，展示了该设备的功能，用于皮肤和可穿戴应用。对T/RH变化的敏感性表明这些TFT适合作为表皮电子和人造皮肤的传感元件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Frontiers in electronics

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