Optical and structural properties of CdS thin films prepared using electro-deposition technique

G. Mahanama, D. Madarasinghe, W. G. D. Dharmaratna, D. Jayasundara
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引用次数: 4

Abstract

Cadmium Sulfide (CdS) thin films were electrodeposited successfully on to Indium Tin Oxide (ITO) coated glass substrates from an aqueous solution of pH 1.4 containing 0.3M CdCl2 and 0.03M Na2S2O3 or Thiourea with the aim of using in CdS/CdTe solar cells. Properties of CdS thin films prepared at different deposition voltages, deposition time periods, deposition temperatures and annealing temperatures were investigated using the current-voltage (I-V) plots. It was found that good quality CdS layers were formed under the deposition conditions of -1.13V for a period of 45 minutes in a solution of temperature at 46 oC. The performance of the CdS layers was improved significantly after annealing the samples at 400 oC for a period of 20 min. The properties of CdS thin films prepared by two and three electrode configurations and using two different electrolytes were compared using the current-voltage plots. It was found that there is a significant improvement of photocurrent of the samples prepared with two electrodes in Thiourea as the S source in comparison with the samples prepared with Na2S2O3. The analysis of XRD spectra showed the hexagonal crystal structure of CdS films confirming the quality of the films prepared by this method. In addition, absorption spectra showed band gap value of 2.42 eV proving that the samples were of good quality. Atomic Force Microscopy (AFM) analysis showed that the roughness values of CdS samples were in the range of 10-15 nm. Film thicknesses of the samples were in the range of 175-225 nm according to the optical profilometric data. Keywords. Cadmium sulfide, electrodeposition, electrolyte, two-electrode, photocurrent.
电沉积法制备CdS薄膜的光学和结构特性
在pH为1.4的含有0.3M CdCl2和0.03M Na2S2O3或硫脲的水溶液中,成功地将硫化镉(CdS)薄膜电沉积在氧化铟锡(ITO)涂层的玻璃衬底上,目的是用于CdS/CdTe太阳能电池。利用电流-电压(I-V)图研究了在不同沉积电压、沉积时间、沉积温度和退火温度下制备的CdS薄膜的性能。结果表明,在-1.13V的条件下,在46℃的溶液中沉积45分钟,形成了质量良好的CdS层。在400℃下退火20 min后,CdS层的性能得到了显著提高。利用电流-电压图比较了两种电极配置和三种不同电解质制备的CdS薄膜的性能。结果表明,以硫脲为S源制备的双电极样品的光电流比以Na2S2O3制备的样品有明显的改善。XRD谱分析表明CdS薄膜具有六方晶体结构,证实了该方法制备的CdS薄膜的质量。此外,吸收光谱显示带隙值为2.42 eV,证明样品质量良好。原子力显微镜(AFM)分析表明,CdS样品的粗糙度值在10 ~ 15 nm范围内。根据光学轮廓数据,样品的膜厚在175 ~ 225 nm之间。关键词。硫化镉,电沉积,电解液,双电极,光电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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