Performance improvement of thin-film transistors with In2O3 channel engineering

IF 2.2 4区材料科学 Q2 MATERIALS SCIENCE, CERAMICS

Journal of Asian Ceramic Societies Pub Date : 2022-07-03 DOI:10.1080/21870764.2022.2101597

Chengzhe Han, Junjie Wang, Guoxia Liu, F. Shan

{"title":"Performance improvement of thin-film transistors with In2O3 channel engineering","authors":"Chengzhe Han, Junjie Wang, Guoxia Liu, F. Shan","doi":"10.1080/21870764.2022.2101597","DOIUrl":null,"url":null,"abstract":"ABSTRACT Thin-film transistors (TFTs) with bilayer channels were used to improve the field-effect mobility and bias stress stability of the TFTs. Homogeneous structures were fabricated by the combination of a carrier deficient layer made of In2O3 thin film annealed in oxygen atmosphere (InO:O) and an electron injection layer made of In2O3 thin film annealed in air (InO:A). Compared with the InO:A/InO:A TFT with only air annealing, the field-effect mobility of InO:O/ InO:A TFT with two-step annealing process was improved from 0.04 to 5.11 cm2/Vs, the on/off current ratio was ameliorated from 4.6 × 105 to 7.6 × 107 A, while the VTH is decreased from 12.5 to 4.7 V under the positive bias stressing (PBS). It is confirmed that the excessive oxygen vacancies are produced by annealing the thin film in the air. The electrical performance of the InO:O/InO:A TFTs with two-step annealing process is greatly improved due to the formation of a low defect state and high carrier concentration electron transport layer, through the combination of the carrier transport layer and the carrier injection layer. These optimized electrical properties indicate an important step toward achieving transparent, high performance, and low-temperature metal oxides TFTs.","PeriodicalId":15130,"journal":{"name":"Journal of Asian Ceramic Societies","volume":"10 1","pages":"660 - 665"},"PeriodicalIF":2.2000,"publicationDate":"2022-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Asian Ceramic Societies","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/21870764.2022.2101597","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}

引用次数: 2

Abstract

ABSTRACT Thin-film transistors (TFTs) with bilayer channels were used to improve the field-effect mobility and bias stress stability of the TFTs. Homogeneous structures were fabricated by the combination of a carrier deficient layer made of In2O3 thin film annealed in oxygen atmosphere (InO:O) and an electron injection layer made of In2O3 thin film annealed in air (InO:A). Compared with the InO:A/InO:A TFT with only air annealing, the field-effect mobility of InO:O/ InO:A TFT with two-step annealing process was improved from 0.04 to 5.11 cm2/Vs, the on/off current ratio was ameliorated from 4.6 × 105 to 7.6 × 107 A, while the VTH is decreased from 12.5 to 4.7 V under the positive bias stressing (PBS). It is confirmed that the excessive oxygen vacancies are produced by annealing the thin film in the air. The electrical performance of the InO:O/InO:A TFTs with two-step annealing process is greatly improved due to the formation of a low defect state and high carrier concentration electron transport layer, through the combination of the carrier transport layer and the carrier injection layer. These optimized electrical properties indicate an important step toward achieving transparent, high performance, and low-temperature metal oxides TFTs.

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In2O3沟道工程对薄膜晶体管性能的改善

摘要采用具有双层沟道的薄膜晶体管（TFT）来提高TFT的场效应迁移率和偏置应力稳定性。通过由在氧气气氛中退火的In2O3薄膜制成的载流子缺陷层（InO:O）和由在空气中退火的in 2O3薄膜制成（InO:a）的电子注入层的组合来制造均匀结构。与仅空气退火的InO:A/InO:A TFT相比，两步退火工艺的InO:O/InO:A薄膜晶体管的场效应迁移率从0.04提高到5.11cm2/Vs，导通/关断电流比从4.6×105提高到7.6×107A，而在正偏压应力（PBS）下VTH从12.5降低到4.7V。证实了过量的氧空位是通过在空气中对薄膜进行退火而产生的。通过载流子传输层和载流子注入层的结合，形成了低缺陷态和高载流子浓度的电子传输层，大大提高了采用两步退火工艺的InO:O/InO:A TFT的电学性能。这些优化的电性能表明，实现透明、高性能和低温金属氧化物TFT迈出了重要一步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Asian Ceramic Societies Materials Science-Ceramics and Composites

CiteScore

5.00

自引率

4.30%

发文量

审稿时长

10 weeks

期刊介绍： The Journal of Asian Ceramic Societies is an open access journal publishing papers documenting original research and reviews covering all aspects of science and technology of Ceramics, Glasses, Composites, and related materials. These papers include experimental and theoretical aspects emphasizing basic science, processing, microstructure, characteristics, and functionality of ceramic materials. The journal publishes high quality full papers, letters for rapid publication, and in-depth review articles. All papers are subjected to a fair peer-review process.