Structural, morphological, and optical properties of praseodymium and aluminium codoped ZnO nanoparticles

IF 1 4区 材料科学
M. S. Viswaksenan, A. Simi, A. Panneeraselvam
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引用次数: 0

Abstract

Using a soft chemical process that involves nitrates and heat annealing, nanoparticles of undoped ZnO and praseodymium, aluminum-codoped ZnO may be produced. XRD, SEM with EDS, and FTIR analysis determine nanocatalyst structures, morphologies, and chemical bonding. PL and UV spectroscopy examines optical characteristics. The peak in the FTIR spectral line at 714 cm-1 in the study indicates M-O stretching in the samples and ZnO's interaction with the Pr and Al matrix. XRD patterns indicated prepared nanoparticles with nanosizes ranging from 40.07 to 38.65 to 36.84 to 38.87 to 39.91 nm. SEM analyzed nanoparticle size, shape, and interaction with the Pr and Al matrix. EDS determined NPs purity. UV-vis spectra of ZnO-Pr/Al nanocomposites showed UV absorption similar to ZnO nanoparticles. Doping ZnO with Pr and Al shrinks the bandgap and slows photogenerated electron-hole pair recombination without changing its crystalline structure.
镨和铝共掺杂ZnO纳米颗粒的结构、形态和光学性质
使用涉及硝酸盐和热退火的软化学工艺,可以制备未掺杂ZnO和镨、铝共掺杂ZnO的纳米颗粒。XRD、SEM、EDS和FTIR分析确定了纳米催化剂的结构、形貌和化学键合。PL和UV光谱检查光学特性。研究中714cm-1处的FTIR谱线峰值表明样品中的M-O拉伸以及ZnO与Pr和Al基体的相互作用。XRD图谱显示所制备的纳米颗粒的纳米尺寸范围为40.07至38.65至36.84至38.87至39.91nm。SEM分析了纳米颗粒的大小、形状以及与Pr和Al基体的相互作用。EDS测定了NP的纯度。ZnO-Pr/Al纳米复合材料的紫外-可见光谱显示出类似于ZnO纳米颗粒的紫外吸收。用Pr和Al掺杂ZnO在不改变其晶体结构的情况下缩小了带隙并减缓了光生电子-空穴对复合。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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