Analytical formulas and measurement technique for the built-in potential of practical semiconductor junctions

Abstract

Abstract Based on Gauss’ law for the electric field, new formulas were deduced, that enable for the first time the writing of an analytical formula of the built-in potential of implanted and diffused semiconductor junctions. Consequently, in this work is devised a measurement technique for the built-in potential of such junctions. Such measurement is useful because new semiconductor materials besides silicon are more and more used today, like silicon-carbide (SiC) and gallium-nitride (GaN), which have larger bandgap and junction built-in potential. Finding the built-in potential helps adjusting the computer assisted design (CAD) tools and validates the simulation of such wide-bandgap devices.