Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt.% TMAX

IF 0.8 4区 工程技术 Q4 ENGINEERING, CHEMICAL
M. Smiljanić, B. Radjenovic, Ž. Lazić, M. Radmilović-Radjenović, Milena Rasljic-Rafajilovic, Katarina Cvetanovic-Zobenica, E. Milinković, Ana Filipović
{"title":"Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt.% TMAX","authors":"M. Smiljanić, B. Radjenovic, Ž. Lazić, M. Radmilović-Radjenović, Milena Rasljic-Rafajilovic, Katarina Cvetanovic-Zobenica, E. Milinković, Ana Filipović","doi":"10.2298/HEMIND200807005S","DOIUrl":null,"url":null,"abstract":"In this paper, fabrication of silicon microchannels with integrated obstacles by using 25 wt % tetramethylammonium hydroxide (TMAH) aqueous solution at the temperature of 80 o C is presented and analysed. We studied basic island patterns, which present union of two symmetrical parallelograms with the sides along predetermined crystallographic directions (2 . Acute angles of the parallelograms were smaller than 45 o . We have derived analytical relations for determining dimensions of the integrated obstacles. The developed etching technique provides reduction of the distance between the obstacles. Before the experiments, we performed simulations of pattern etching based on the level set method and presented evolution of the etched basic patterns for the predetermined crystallographic directions . Combination of basic patterns with sides along the and crystallographic directions is used to fabricate a matrix of two row of silicon obstacles in a microchannel. We obtained a good agreement between the experimental results and simulations. Our results enable simple and cost-effective fabrication of various complex microfluidic silicon platforms with integrated obstacles.","PeriodicalId":12913,"journal":{"name":"Hemijska Industrija","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2021-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Hemijska Industrija","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.2298/HEMIND200807005S","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, fabrication of silicon microchannels with integrated obstacles by using 25 wt % tetramethylammonium hydroxide (TMAH) aqueous solution at the temperature of 80 o C is presented and analysed. We studied basic island patterns, which present union of two symmetrical parallelograms with the sides along predetermined crystallographic directions (2 . Acute angles of the parallelograms were smaller than 45 o . We have derived analytical relations for determining dimensions of the integrated obstacles. The developed etching technique provides reduction of the distance between the obstacles. Before the experiments, we performed simulations of pattern etching based on the level set method and presented evolution of the etched basic patterns for the predetermined crystallographic directions . Combination of basic patterns with sides along the and crystallographic directions is used to fabricate a matrix of two row of silicon obstacles in a microchannel. We obtained a good agreement between the experimental results and simulations. Our results enable simple and cost-effective fabrication of various complex microfluidic silicon platforms with integrated obstacles.
25 wt.% TMAX蚀刻硅微通道中集成障碍的可控排列
本文介绍并分析了在80℃的温度下,用25wt%的四甲基氢氧化铵(TMAH)水溶液制备具有集成障碍物的硅微通道。我们研究了基本的岛屿模式,其呈现出两个对称平行四边形的并集,所述两个平行四边形具有沿着预定结晶方向的边(2)平行四边形的锐角小于45°。我们导出了确定集成障碍物尺寸的分析关系。所开发的蚀刻技术可以减少障碍物之间的距离。在实验之前,我们基于水平集方法对图案蚀刻进行了模拟,并给出了蚀刻后的基本图案的演变对于预定的结晶方向。基本图案与沿和结晶方向的边的组合用于在微通道中制造两排硅障碍物的矩阵。我们在实验结果和模拟结果之间获得了很好的一致性。我们的研究结果使各种具有集成障碍物的复杂微流控硅平台的制造变得简单且具有成本效益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Hemijska Industrija
Hemijska Industrija 工程技术-工程:化工
CiteScore
1.60
自引率
11.10%
发文量
12
审稿时长
6-12 weeks
期刊介绍: The Journal Hemijska industrija (abbreviation Hem. Ind.) is publishing papers in the field of Chemical Engineering (Transport phenomena; Process Modeling, Simulation and Optimization; Thermodynamics; Separation Processes; Reactor Engineering; Electrochemical Engineering; Petrochemical Engineering), Biochemical Engineering (Bioreactors; Protein Engineering; Kinetics of Bioprocesses), Engineering of Materials (Polymers; Metal materials; Non-metal materials; Biomaterials), Environmental Engineeringand Applied Chemistry. The journal is published bimonthly by the Association of Chemical Engineers of Serbia (a member of EFCE - European Federation of Chemical Engineering). In addition to professional articles of importance to industry, scientific research papers are published, not only from our country but from all over the world. It also contains topics such as business news, science and technology news, information on new apparatus and equipment, and articles on environmental protection.
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