47‐4: Highly Sensitive Lateral Poly‐Si PIN Photodiode by Blue Laser Annealing of 400 nm Amorphous Si for Near Infrared Light Sensing

Abstract

We report a novel low‐temperature poly‐Si (LTPS) lateral PIN photodiode fabricated using blue laser annealing (BLA) of amorphous Si. The diode exhibits the low off current density of ~ 2.5×10 ‐5 A/cm 2 in dark and a diode factor of 1.47. Under near‐infrared (850 nm) illumination with a power density of 20 mW/cm 2, the photocurrent increases by 1.5×10 3 times at ‐1 V. In addition, we demonstrate that the generated photocurrent can be effectively amplified by a LTPS oxide (LTPO) operational amplifier, yielding the output signal of 17.60 V. Our results suggest that the proposed LTPS‐based photodiode has a great potential for applications in highly sensitive optoelectronic devices.