Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications

IF 1.1 4区 物理与天体物理 Q4 NANOSCIENCE & NANOTECHNOLOGY
N. Obaid, A. Al-Nafiey, G. Al-Dahash
{"title":"Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications","authors":"N. Obaid, A. Al-Nafiey, G. Al-Dahash","doi":"10.1117/1.JNP.17.036009","DOIUrl":null,"url":null,"abstract":"Abstract. The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag  /  PSi  /  P3HT  −  G  /  MoS2  /  Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35  A  /  W, 5.1  ×  1012  cm Hz1/2 W  −  1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23  A  /  W, 3.3  ×  1012  cm Hz1/2 W  −  1, and 38.9% at 760 nm due to the absorption edge of P3HT  −  G  /  MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT  −  G  /  MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.","PeriodicalId":16449,"journal":{"name":"Journal of Nanophotonics","volume":"17 1","pages":"036009 - 036009"},"PeriodicalIF":1.1000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanophotonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JNP.17.036009","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0

Abstract

Abstract. The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag  /  PSi  /  P3HT  −  G  /  MoS2  /  Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35  A  /  W, 5.1  ×  1012  cm Hz1/2 W  −  1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23  A  /  W, 3.3  ×  1012  cm Hz1/2 W  −  1, and 38.9% at 760 nm due to the absorption edge of P3HT  −  G  /  MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT  −  G  /  MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.
P3HT−G/MoS2纳米复合材料薄膜在光电探测器中的合成与表征
摘要首次通过脉冲激光烧蚀(PLA)方法制备了聚(3-己基噻吩-2,5-二基)(P3HT)-石墨烯/二硫化钼(MoS2)纳米复合材料,使用液滴铸造技术将不同数量的激光脉冲沉积在多孔硅(PSi)衬底上。通过电化学蚀刻P型硅片制备了纳米晶体PSi薄膜。对其光学性能、透射电子显微镜(TEM)和光电探测器的性能进行了研究。光学测量证实,随着石墨烯和MoS2的激光脉冲数量的增加,能隙从2.03 eV减小到1.87 eV。能隙的减小归因于石墨烯及其与钼的结合的增加。由于混合材料的电导率较高,MoS2导致带隙减小。根据TEM图像,发现颗粒的平均尺寸在3.1和20.8nm之间,这取决于具有半球形颗粒形状的石墨烯和MoS2的激光脉冲数量的增加。Ag  /  PSi  /  P3HT  −  G  /  二硫化钼  /  制备了所有样品的Ag光电探测器,以表征石墨烯和MoS2的激光脉冲数对光电探测器性能的影响。比响应、比检测和量子效率的最大值为0.35  A.  /  W、 5.1  ×  1012  厘米 Hz1/2 W  −  1和49.2%  A.  /  W、 3.3  ×  1012  厘米 Hz1/2 W  −  1和38.9%  −  G  /  MoS2 NPS。结果表明,PLA方法成功地制备了P3HT  −  G  /  MoS2纳米复合材料,并且所得产物在响应度、探测率和量子效率方面表现出高值。此外,纳米复合材料可能增强了PSi光电探测器的相同参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Nanophotonics
Journal of Nanophotonics 工程技术-光学
CiteScore
2.60
自引率
6.70%
发文量
42
审稿时长
3 months
期刊介绍: The Journal of Nanophotonics publishes peer-reviewed papers focusing on the fabrication and application of nanostructures that facilitate the generation, propagation, manipulation, and detection of light from the infrared to the ultraviolet regimes.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信