Structural, optical and electrical properties of copper oxide thin films deposited by spray pyrolysis

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-07-01 DOI:10.15251/jor.2023.194.369

N. Alouche, B. Boudjema, R. Daira, M. Abdelkader

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引用次数: 0

Abstract

In this work, we have developed thin layers of CuO by method of pyrolysis spray. The samples developed are obtained from the use of copper chloride precursor CuCl2 with molarity of 0.1 mol/l and a spray number that varies between 25 to 150 spray with a step of 25 spray to see the effect of this parameter on the structural, optical and electrical properties of our material. The structural characterization of the obtained thin layers was done by X-ray diffraction (XDR) and spectroscopy Raman. The optical characterization was done by UV visible spectroscopy and electrical characterization by four points. The XDR has confirmed the crystalline state of our thin layers and the formation of the CuO with a preferential direction according to the plan (002). The Raman spectroscopy allowed us to confirm the presence of a thin layer based on the CuO. The lattice parameters remain mainly constant. The spectra UV visible of films has given a transmission varies between 80% and 40% in visible. The optical gap determined varies between 1.75 eV and 1.2 eV. Electrical characterization shows that the resistivity varied between 3.21KΩ.cm and 1.7KΩ.cm depending on number of spray for ethanol gas sensing applications.

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喷雾热解法制备氧化铜薄膜的结构、光学和电学性能

在这项工作中，我们用热解喷雾的方法开发了CuO薄层。开发的样品是通过使用氯化铜前体CuCl2获得的，其摩尔浓度为0.1mol/l，喷雾次数在25至150之间变化，喷雾步骤为25次，以观察该参数对我们材料的结构、光学和电学性能的影响。通过X射线衍射（XDR）和拉曼光谱对所获得的薄层进行了结构表征。通过紫外-可见光谱进行光学表征，并通过四点进行电学表征。根据计划（002），XDR已经证实了我们的薄层的结晶状态和具有优先方向的CuO的形成。拉曼光谱使我们能够确认基于CuO的薄层的存在。晶格参数主要保持不变。薄膜的紫外可见光谱给出了在可见光中80%到40%之间的透射。确定的光学间隙在1.75eV和1.2eV之间变化。电学特性表明，电阻率在3.21KΩ.cm和1.7KΩ.cm之间变化，这取决于乙醇气体传感应用的喷雾次数。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.