Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs

Q4 Engineering

International Journal of High Speed Electronics and Systems Pub Date : 2023-07-20 DOI:10.1142/s0129156423500180

F. Jain, R. Gudlavalleti, A. Almalki, B. Saman, P-Y. Chan, J. Chandy, F. Papadimitrakopoulos, E. Heller

引用次数: 0

Abstract

This paper presents multi-state QDC-QDG FET structures that has the potential to introduce additional states (8 or 16) by utilizing additional mini-energy sub-bands. Mini-energy bands are formed in Si quantum dot channel (QDC) comprising two silicon oxide cladded Si quantum dots (QDs). Quantum simulations are presented to show more states when additional two germanium oxide cladded Ge dots are added on top of two Si QD layers in the gate region. With the addition of a control gate oxide layer, we transform the QDC-QDG-FET into a quantum dot (QD) nonvolatile random access memory (NVRAM). Quantum simulations are presented.

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利用Si量子点通道(QDC)和Ge量子点门(QDG)场效应管和nvram通过小能带跃迁提高比特数

本文提出了多态QDC-QDG FET结构，该结构有可能通过利用额外的微能子带引入额外的态（8或16）。在包括两个氧化硅包覆的Si量子点（QD）的Si量子点通道（QDC）中形成微小能带。量子模拟显示了当在栅极区域的两个Si QD层的顶部添加额外的两个锗氧化物包覆的Ge点时的更多状态。通过添加控制栅极氧化物层，我们将QDC-QDG-FET转换为量子点（QD）非易失性随机存取存储器（NVRAM）。给出了量子模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.60

自引率

0.00%

发文量

期刊介绍： Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.