Tuning absorption and emission in monolayer semiconductors: a brief survey

IF 1.3 4区物理与天体物理 Q3 ASTRONOMY & ASTROPHYSICS

Comptes Rendus Physique Pub Date : 2021-06-11 DOI:10.5802/CRPHYS.59

Lei Ren, C. Robert, B. Urbaszek, X. Marie, M. A. Semina, M. Glazov

引用次数: 0

Abstract

. We review the physical mechanisms that allow tuning of absorption and emission characteristics in monolayer semiconductors. We use the model system of transition metal dichalcogenide mono-layers such as MoSe 2 or WSe 2 due to their very e ﬃ cient light-matter interaction and availability of high quality samples. For monolayers encapsulated in hexagonal boron nitride both homogeneous and inhomogenous contributions to the exciton optical transition linewidth can be tuned opening up pathways for tailoring the reﬂectivity and absorption in van der Waals heterostructures

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单层半导体的调谐吸收和发射：综述

．我们回顾了允许调谐单层半导体的吸收和发射特性的物理机制。我们使用过渡金属二硫化物单层模型系统，如MoSe 2或WSe 2，因为它们非常有效的光-物质相互作用和高质量样品的可用性。对于包裹在六方氮化硼中的单层，激子光学跃迁线宽的均匀和非均匀贡献都可以调整，从而开辟了调整范德华异质结构的反射率和吸收的途径

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Comptes Rendus Physique 物理-天文与天体物理

CiteScore

2.80

自引率

0.00%

发文量

审稿时长

17.2 weeks

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