Investigating PMMA as a potential insulator material for metal-insulator-metal diode

Q4 Engineering
S. Shriwastava, K. Bhatt, Sandeep Sharma, Sandeep Kumar, C. C. Tripathi
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引用次数: 1

Abstract

The metal-insulator-metal (MIM) diodes are considered very promising for high frequency applications because of its tunnelling-based ultrafast charge transport mechanism. A wide variety of materials are being explored in quest of developing these thin film devices. Recently, organic insulator-based MIM diodes have attracted significant attention to the researchers due to its several advantages and have become a promising alternative of conventional inorganic insulators. In the present work the feasibility of an organic polymer polymethyl methacrylate (PMMA) is investigated for insulating material of MIM junction. It is a transparent resin which is able to produce uniform and thin insulating layer with low defect density. In this work, an Al/PMMA/Cr structure is fabricated by optimising different process parameters in order to develop high performance, reproducible organic MIM diodes. The as fabricated device exhibited fairly asymmetric and nonlinear current-voltage characteristics, which reveals the viability of PMMA as candidate material for insulator layer in MIM diodes.
研究PMMA作为金属-绝缘体-金属二极管的潜在绝缘体材料
金属-绝缘体-金属(MIM)二极管由于其基于隧穿的超快电荷输运机制而被认为是非常有前途的高频器件。为了开发这些薄膜器件,人们正在探索各种各样的材料。近年来,基于有机绝缘体的MIM二极管由于其诸多优点而引起了研究人员的极大关注,并已成为传统无机绝缘体的一种有前景的替代品。本文研究了有机聚合物聚甲基丙烯酸甲酯(PMMA)作为MIM结绝缘材料的可行性。它是一种透明树脂,能够产生均匀薄的绝缘层,缺陷密度低。在这项工作中,通过优化不同的工艺参数,制备了Al/PMMA/Cr结构,以开发高性能,可重复的有机MIM二极管。所制备的器件具有相当的非对称和非线性的电流电压特性,表明PMMA作为MIM二极管绝缘层的候选材料是可行的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of Nanoparticles
International Journal of Nanoparticles Engineering-Mechanical Engineering
CiteScore
1.60
自引率
0.00%
发文量
15
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