Notch-δ-doped InP Gunn diodes for low-THz band applications

Q1 Engineering

Journal of Electronic Science and Technology Pub Date : 2023-06-01 DOI:10.1016/j.jnlest.2023.100203

Duu Sheng Ong , Siti Amiera Mohd Akhbar , Kan Yeep Choo

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Abstract

The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (A₀) and the fundamental operating frequency (f₀) of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in f₀ and 2.4 times larger in A₀ under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 K to 500 K; however, its operating frequency lies at 280 GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.

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用于低太赫兹波段应用的陷波-δ掺杂InP Gunn二极管

基于陷波δ掺杂结构，利用蒙特卡罗模型分析了磷化铟(InP) Gunn二极管作为低太赫兹波段光源的可行性。在600 nm长度器件中，δ掺杂层的存在使InP - Gunn二极管的电流谐波幅值(A0)和基频(f0)在300 GHz以上得到提高。在直流偏置下，缺口δ掺杂的InP - Gunn二极管具有优异的电子输运性能，比相应的砷化镓(GaAs)二极管高1.35倍，A0高2.4倍。经优化后的InP陷波δ掺杂结构在361 GHz下可产生0.32 w的射频功率。蒙特卡罗模拟预测，当器件温度从300 K增加到500 K时，射频功率降低44%;然而，它的工作频率为280千兆赫，在低太赫兹频段内。这表明，陷波δ掺杂的InP Gunn二极管是一种非常有前途的低太赫兹传感器信号源，这在自动驾驶汽车行业有很高的需求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

0.00%

发文量

1362

审稿时长

99 days

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