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Investigation of the electrical characteristics and sensitivity analysis of a nanoscale double gate metal source drain transistor with InAs as the channel material via Green’s function formalism

Q4 Physics and Astronomy
Iranian Journal of Physics Research Pub Date : 2023-03-01 DOI:10.47176/ijpr.22.4.01330
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用格林函数形式研究以InAs为沟道材料的纳米级双栅金属源漏晶体管的电学特性和灵敏度分析
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Iranian Journal of Physics Research
Iranian Journal of Physics Research Physics and Astronomy-Physics and Astronomy (all)
CiteScore
0.20
自引率
0.00%
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0
审稿时长
30 weeks
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