Effects of inorganic MnO2 and ZnO nanofillers on the structural investigations and dielectric behaviour of PVA polymeric materials

IF 1 4区 材料科学
B. M. Alotaibi, H. Al-Yousef, A. Atta, F. Taher
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引用次数: 0

Abstract

Different contents of manganese oxide (MnO2) and zinc oxide (ZnO) were combined with polyvinyl alcohol (PVA) to form flexi MnO2/PVA as well as ZnO/PVA nanocomposite films. XRD as well SEM methodologies are used to evaluate the properties of the fabricated films. The XRD analysis demonstrates that MnO2/PVA as well as ZnO/PVA composites were effectively fabricated. The SEM pictures show that MnO2 and ZnO are uniformly dispersed throughout the PVA polymeric chains. Furthermore, the electrical conductivities, dielectric permittivity, electric moduli behaviors, as well as dielectric impedances of PVA, MnO2/PVA, ZnO/PVA films were recorded using LCR method in frequencies 102 to 106 Hz. At 105 Hz, the dielectric enhanced from 2.05 for PVA to 5.5 on PVA/5%ZnO and 4.15 for PVA/10%MnO2, while the conductivities increase from 1.05x10-7 S/cm for PVA to 4.01x10-7 S/cm for PVA/5%ZnO and to 5.4x10-7 S/cm for PVA/10%MnO2. The current work pave the way to using of ZnO/PVA and MnO2/PVA flexi nanocomposite films in a different uses including battery, super-capacitors, as well as storage devices.
无机MnO2和ZnO纳米填料对PVA聚合物结构研究和介电性能的影响
将不同含量的氧化锰(MnO2)和氧化锌(ZnO)与聚乙烯醇(PVA)结合形成柔性MnO2/PVA以及ZnO/PVA纳米复合膜。XRD和SEM方法用于评估所制备的薄膜的性能。XRD分析表明,制备了MnO2/PVA及ZnO/PVA复合材料。SEM照片显示MnO2和ZnO均匀地分散在PVA聚合物链中。此外,使用LCR方法在102至106Hz的频率下记录了PVA、MnO2/PVA、ZnO/PVA膜的电导率、介电常数、电模量行为以及介电阻抗。在105Hz下,介电常数从PVA的2.05提高到PVA/5%ZnO的5.5和PVA/10%MnO2的4.15,而电导率从PVA的1.05x10-7 S/cm提高到PVA/5%ZnO的4.01x10-7 S/cm和PVA/10%MnO2的5.4x10-7 S/cm。目前的工作为ZnO/PVA和MnO2/PVA柔性纳米复合膜在电池、超级电容器和存储设备等不同用途中的应用铺平了道路。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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