A 18–44 GHz Low Noise Amplifier With Input Matching and Bandwidth Extension Techniques

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Microwave and Wireless Components Letters Pub Date : 2022-09-01 DOI:10.1109/LMWC.2022.3163462

Ruitao Wang, Chenguang Li, Jian Zhang, S.-D. Yin, Weixing Zhu, Yan Wang

{"title":"A 18–44 GHz Low Noise Amplifier With Input Matching and Bandwidth Extension Techniques","authors":"Ruitao Wang, Chenguang Li, Jian Zhang, S.-D. Yin, Weixing Zhu, Yan Wang","doi":"10.1109/LMWC.2022.3163462","DOIUrl":null,"url":null,"abstract":"This letter presents a low noise amplifier (LNA) with a 3-dB gain bandwidth (3-dB BW) of 18–44 GHz in 65-nm CMOS technology. By deriving an analytical equation of input impedance, a co-design methodology for the first two stages of LNA that can simultaneously achieve broadband input matching and low noise figure (NF) is implemented. Weakly coupled asymmetric transformers that introduce a section of reverse parallel winding in the primary coil are designed to realize broadband interstage matching, optimize the gain flatness and boost the transconductance. The proposed LNA achieves a measured peak gain of 19.5 dB with a fractional 3-dB gain bandwidth (FBW) of 83.8%, covering the whole <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band and <inline-formula> <tex-math notation=\"LaTeX\">$Ka$ </tex-math></inline-formula>-band. The measured NF is 2.6–3.5 dB from 20 to 43 GHz. To the best of our knowledge, the proposed LNA achieves the highest 3-dB BW and FBW with competitive NF. The measured input 1-dB gain compression point (<inline-formula> <tex-math notation=\"LaTeX\">$\\text {IP}_{\\mathrm {1\\,dB}}$ </tex-math></inline-formula>) ranges from −23 to −18.5 dBm over the entire 3-dB gain bandwidth.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1083-1086"},"PeriodicalIF":2.9000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3163462","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 6

Abstract

This letter presents a low noise amplifier (LNA) with a 3-dB gain bandwidth (3-dB BW) of 18–44 GHz in 65-nm CMOS technology. By deriving an analytical equation of input impedance, a co-design methodology for the first two stages of LNA that can simultaneously achieve broadband input matching and low noise figure (NF) is implemented. Weakly coupled asymmetric transformers that introduce a section of reverse parallel winding in the primary coil are designed to realize broadband interstage matching, optimize the gain flatness and boost the transconductance. The proposed LNA achieves a measured peak gain of 19.5 dB with a fractional 3-dB gain bandwidth (FBW) of 83.8%, covering the whole

$K$

-band and

$Ka$

-band. The measured NF is 2.6–3.5 dB from 20 to 43 GHz. To the best of our knowledge, the proposed LNA achieves the highest 3-dB BW and FBW with competitive NF. The measured input 1-dB gain compression point (

$\text {IP}_{\mathrm {1\,dB}}$

) ranges from −23 to −18.5 dBm over the entire 3-dB gain bandwidth.

查看原文本刊更多论文

具有输入匹配和带宽扩展技术的18–44 GHz低噪声放大器

本文介绍了一种采用65纳米CMOS技术的低噪声放大器(LNA)，其3db增益带宽(3db BW)为18-44 GHz。通过推导输入阻抗的解析方程，实现了LNA前两阶段的协同设计方法，可以同时实现宽带输入匹配和低噪声系数(NF)。为了实现宽带级间匹配，优化增益平坦度，提高跨导，设计了在初级线圈中引入一段反向并联绕组的弱耦合非对称变压器。该LNA的实测峰值增益为19.5 dB，分数阶3db增益带宽(FBW)为83.8%，覆盖了整个$K$和$Ka$频段。测量到的NF在20 ~ 43 GHz范围内为2.6 ~ 3.5 dB。据我们所知，所提出的LNA在竞争NF下实现了最高的3db BW和FBW。测量的输入1db增益压缩点($\text {IP}_{\mathrm {1\，dB}}$)在整个3db增益带宽范围为−23至−18.5 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Microwave and Wireless Components Letters 工程技术-工程：电子与电气

自引率

13.30%

发文量

376

审稿时长

3.0 months

期刊介绍： The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.