Synthesis and characterizations of nickel doped Co-Zn-Y ferrites

IF 1 4区 材料科学
H. Ali, N. Amin, M. Akhtar, M. Arshad, M. Athar, N. Morley, M. Yusaf, Z. Latif, K. Mehmood
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引用次数: 0

Abstract

The Nickel substituted Cu-Co-Zn-Ce nano ferrites, Zn0.15Co0.45Cu0.40-xNix Fe1.85Ce0.15O4 with x=0, 0.1, 0.20, 0.30, 0.40, were synthesized using the coprecipitation technique. The sample were sintered at 900 ℃ for 5h. The structural, electrical, dielectric and magnetic properties of all the prepared samples were characterized by XRD, SMU2401, UV-Vis and FTIR. The powder X-ray diffraction patterns of all the prepared samples confirmed the formation of single-phase cubic spinel structures. These samples further characterized for the electrical properties by using two-probe type method. The DC resistivity of all the ferrite composition decreased as the temperature increased, showing their semiconductor nature. UV-Vis and FTIR confirmed the substitution of nickel in Cu-Co-Zn-Ce ferrites. From UV-Vis it is observed that the optical band gap changes from 3.9 eV to 5.3 eV with addition of Ni. FTIR analysis revealed that a strong variation on tetrahedral absorption frequency band is present which is due to the replacement of Ni on Cu. All these results suggested that these materials can be used for wastewater treatment.
镍掺杂Co-Zn-Y铁氧体的合成与表征
采用共沉淀法合成了x=0、0.1、0.20、0.30、0.40的镍取代Cu-Co-Zn-Ce纳米铁氧体Zn0.15Co0.45Cu0.40-xNixFe1.85Ce0.15O4。样品在900℃下烧结5h。用XRD、SMU2401、UV-Vis和FTIR对制备的样品的结构、电学、介电和磁学性能进行了表征。所有制备的样品的粉末X射线衍射图证实了单相立方尖晶石结构的形成。通过使用双探针型方法对这些样品的电学性质进行了进一步表征。所有铁氧体成分的直流电阻率随着温度的升高而降低,显示出它们的半导体性质。UV-Vis和FTIR证实了Cu-Co-Zn-Ce铁氧体中镍的取代。从紫外-可见光谱观察到,随着Ni的加入,光学带隙从3.9eV变化到5.3eV。FTIR分析表明,由于Ni在Cu上的取代,四面体吸收频带出现了强烈的变化。所有这些结果表明,这些材料可以用于废水处理。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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