Effect of reduced graphene oxide hybridization on ZnO nanoparticles sensitivity to NO2 gas: A DFT study

IF 1 4区 材料科学
M. A. Abdulsattar, M. Hussein, M. Kahaly
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引用次数: 0

Abstract

In the present work, a density functional theory (DFT) calculation to simulate reduced graphene oxide (rGO) hybrid with zinc oxide (ZnO) nanoparticle's sensitivity to NO2 gas is performed. In comparison with the experiment, DFT calculations give acceptable results to available bond lengths, lattice parameters, X-ray photoelectron spectroscopy (XPS), energy gaps, Gibbs free energy, enthalpy, entropy, etc. to ZnO, rGO, and ZnO/rGO hybrid. ZnO and rGO show n-type and p-type semiconductor behavior, respectively. The formed p-n heterojunction between rGO and ZnO is of the staggering gap type. Results show that rGO increases the sensitivity of ZnO to NO2 gas as they form a hybrid. ZnO/rGO hybrid has a higher number of vacancies that can be used to attract oxygen atoms from NO2 and change the resistivity of the hybrid. The combined reduction of oxygen from NO2 and NO can give a very high value of the Gibbs free energy of reaction that explains the ppb level sensitivity of the ZnO/rGO hybrid. The dissociation of NO2 in the air reduces the sensitivity of the ZnO/rGO hybrid at temperatures higher than 300 ̊C.
还原氧化石墨烯杂化对ZnO纳米粒子对NO2气体敏感性的影响:DFT研究
本文采用密度泛函理论(DFT)模拟了还原氧化石墨烯(rGO)与氧化锌(ZnO)纳米粒子对NO2气体的敏感性。与实验相比,DFT计算对ZnO、rGO和ZnO/rGO杂化物的可用键长、晶格参数、x射线光电子能谱(XPS)、能隙、吉布斯自由能、焓、熵等都给出了可接受的结果。ZnO和rGO分别表现为n型和p型半导体行为。氧化石墨烯与氧化锌之间形成的p-n异质结为交错隙型。结果表明,氧化石墨烯增加了ZnO对NO2气体的敏感性。ZnO/rGO杂化物具有更多空位,可以用来吸引NO2中的氧原子并改变杂化物的电阻率。NO2和NO对氧的联合还原可以得到很高的反应吉布斯自由能,这解释了ZnO/rGO杂化物的ppb级敏感性。当温度高于300℃时,NO2在空气中的解离会降低ZnO/rGO杂化物的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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