Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure

Abstract

Abstract Effect of LaCl3 concentration on the electrical conduction mechanism of LaF3/porous silicon (PS) structure has been investigated in this work. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique, LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The electrical conduction study has been done by impedance analyzer (HP4294A). From this study it can be concluded that the conductance increases with LaCl3 concentration but decreases for higher concentration.