Investigation of dilute aluminum doped zinc oxide thin films: structural and morphological properties for varies applicationss

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2022-11-03 DOI:10.15251/jor.2022.185.699

A. Ashour, E. E. Assem, E. R. Shaaban

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引用次数: 0

Abstract

To form a better view of the influences of Al in ZnO, the crystalline structure parameters and morphological (via SEM) of Zn1-xAlxO (x=0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films organized onto glass substrates using by spin coating technique. The effects of Al doping on the structural ZnO nano crystalline films are investigated using (XRD), (EDAX) and (SEM). Rietveld refinement was used to examine the XRD patterns of Zn1- xAlxO thin films. This was done using Fullprof software. The XRD results showed that Al ions successfully replaced the Zn2+ lattice sites without any major change in the structure after Zn2+ substitution, and their crystallinity decreased with increasing Al doping content. Also, The XRD analysis confirmed the hexagonal structure. Lattice constant, Cell volume, Atomic Packing Fraction and surface density have been calculated. The microstructural parameters, crystallite size and lattice strain of Zn1-xAlxO thin films were calculated. The changes in microstructural parameters were discussed as dependent Al concentration. The Zn–O bond lengths and bond angle of Zn1-xAlxO were determined and have changed.

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稀铝掺杂氧化锌薄膜的结构和形态特性研究

为了更好地观察Al在ZnO中的影响，使用旋涂技术在玻璃衬底上组织的Zn1-xAlxO（x=0.0、0.02、0.04、0.06、0.08和0.10）薄膜的晶体结构参数和形态（通过SEM）。利用（XRD）、（EDAX）和（SEM）研究了Al掺杂对ZnO纳米结构薄膜的影响。用Rietveld精细化方法研究了Zn1-xAlxO薄膜的XRD图谱。这是使用Fullprof软件完成的。XRD结果表明，在Zn2+取代后，Al离子成功地取代了Zn2+晶格位，结构没有任何重大变化，并且它们的结晶度随着Al掺杂量的增加而降低。此外，XRD分析证实了六方结构。计算了晶格常数、晶胞体积、原子堆积分数和表面密度。计算了Zn1-xAlxO薄膜的微观结构参数、晶粒尺寸和晶格应变。讨论了微观结构参数随Al浓度的变化。测定了Zn1-xAlxO的Zn–O键长和键角，并发生了变化。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.