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Capacitance–frequency (C-V–f) and conductance–frequency (G-V–f) characteristics of Au/n-GaN freestanding Schottky structure

IF 0.8 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal of New Technology and Materials Pub Date : 2018-07-02 DOI:10.12816/0048929
H. Mazari, K. Ameur, R. Khelifi
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Au/n-GaN独立肖特基结构的电容-频率（C-V–f）和电导-频率（G-V–f
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Journal of New Technology and Materials
Journal of New Technology and Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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