Design and Development of a Measurement System Dedicated to Estimate the Junction Temperature of Insulated Gate Bipolar Transistor Modules

IF 0.8 Q3 ENGINEERING, MULTIDISCIPLINARY

International Journal of Engineering Research in Africa Pub Date : 2022-05-20 DOI:10.4028/p-z9wh2k

Badredine Lamuadni, Rachid El Bouayadi, A. Amine, D. Zejli

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引用次数: 2

Abstract

The damage state estimation of an Insulated Gate Bipolar Transistor (IGBT) power module requires the measurement of the junction temperature (Tj) of the active region. However, the accurate measurement of the temperature Tj is not simple to achieve and several methods have been developed to improve the accuracy of Tj measurements. Some of the well-known methods include the use of thermo-sensitive electrical parameters (TSEP). Although the TSEP methods do not provide access to the thermal mapping of the IGBT surface, they have the advantage of not affecting the physical integrity of the module. This paper aims to present a reliable programmable measurement system dedicated to estimating with great accuracy the thermal performance of the IGBT power module on the microsecond scale using the TSEP method. The advantage of this system is to provide full control of the injection of the power current and allows quick measurements of the cooling curve just after the injection of the heating power in the chip. The junction temperature calculated from the TSEP was found to be equal to 97.5 °C, which was confirmed by using the thermal camera. The accuracy of the proposed technique was found to be less than 2%. A comparison with the thermal Resistor-Capacitor (RC) network model is also carried out in this work. Experimental results demonstrate that the designed system is high efficiency and can, therefore, be used by scientific researchers and industrial engineers for predictive maintenance to monitor the performance state of IGBT power modules, which will reduce the probability of its failure or degradation.

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绝缘栅双极晶体管模块结温测量系统的设计与开发

绝缘栅双极晶体管(IGBT)功率模块的损伤状态估计需要测量有源区结温(Tj)。然而，温度Tj的精确测量并不容易实现，已经开发了几种方法来提高Tj测量的精度。一些众所周知的方法包括使用热敏电参数(TSEP)。虽然TSEP方法不提供对IGBT表面的热映射的访问，但它们具有不影响模块物理完整性的优点。本文旨在介绍一种可靠的可编程测量系统，用于使用TSEP方法在微秒尺度上高精度地估计IGBT功率模块的热性能。该系统的优点是提供对功率电流注入的完全控制，并允许在芯片注入加热功率后快速测量冷却曲线。由TSEP计算得到的结温为97.5℃，并用热像仪进行了验证。发现所提出的技术的准确度小于2%。并与热敏电阻-电容(RC)网络模型进行了比较。实验结果表明，所设计的系统效率高，可用于科研人员和工业工程师进行预测维护，监测IGBT功率模块的性能状态，降低其故障或退化的概率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Engineering Research in Africa ENGINEERING, MULTIDISCIPLINARY-

CiteScore

1.80

自引率

14.30%

发文量

期刊介绍： "International Journal of Engineering Research in Africa" is a peer-reviewed journal which is devoted to the publication of original scientific articles on research and development of engineering systems carried out in Africa and worldwide. We publish stand-alone papers by individual authors. The articles should be related to theoretical research or be based on practical study. Articles which are not from Africa should have the potential of contributing to its progress and development.