A compact broadband high power quasi-MMIC GaN power amplifier

IF 0.8 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Linsheng Liu, Q. Lin, Wu Haifeng, Yijun Chen, Liu-lin Hu
{"title":"A compact broadband high power quasi-MMIC GaN power amplifier","authors":"Linsheng Liu, Q. Lin, Wu Haifeng, Yijun Chen, Liu-lin Hu","doi":"10.1108/cw-07-2020-0157","DOIUrl":null,"url":null,"abstract":"\nPurpose\nThe design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications.\n\n\nDesign/methodology/approach\nTo obtain an efficient, high-gain and high-power performance with in a compact and low-cost size, the prototype is based on Gallium nitride (GaN) on SiC 0.25-µm transistors, whereas the passive matching networks are realized on an AlN substrate as thin film circuit.\n\n\nFindings\nMeasured results of the q-MMIC PA across the 0.2 to 2.2 GHz band show at least 32 ± 3 dB small-signal gains, an output power of 7 to 12 W and an average power add efficiency greater than 54%. The q-MMIC occupies an area of 12.8 × 14.5 mm2.\n\n\nOriginality/value\nTo the best of the authors’ knowledge, this work reports the first full integrated PA which covers the frequency range of 0.2 to 2.2 GHz and achieves the combination of highest gain, about 10 W output power, together with the smallest component size among all published GaN PAs to date.\n","PeriodicalId":50693,"journal":{"name":"Circuit World","volume":" ","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2021-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Circuit World","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/cw-07-2020-0157","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Purpose The design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications. Design/methodology/approach To obtain an efficient, high-gain and high-power performance with in a compact and low-cost size, the prototype is based on Gallium nitride (GaN) on SiC 0.25-µm transistors, whereas the passive matching networks are realized on an AlN substrate as thin film circuit. Findings Measured results of the q-MMIC PA across the 0.2 to 2.2 GHz band show at least 32 ± 3 dB small-signal gains, an output power of 7 to 12 W and an average power add efficiency greater than 54%. The q-MMIC occupies an area of 12.8 × 14.5 mm2. Originality/value To the best of the authors’ knowledge, this work reports the first full integrated PA which covers the frequency range of 0.2 to 2.2 GHz and achieves the combination of highest gain, about 10 W output power, together with the smallest component size among all published GaN PAs to date.
一种小型宽带高功率准mmic GaN功率放大器
目的设计并实现了一种适用于0.2到2.2的宽带准单片微波集成电路(q-MMIC)功率放大器 GHz应用。设计/方法/方法为了以紧凑和低成本的尺寸获得高效、高增益和高功率性能,原型基于SiC 0.25µm晶体管上的氮化镓(GaN),而无源匹配网络是在AlN衬底上作为薄膜电路实现的。结果q-MMIC PA在0.2至2.2范围内的测量结果 GHz频段显示至少32±3 dB小信号增益,输出功率为7到12 W,并且平均功率添加效率大于54%。q-MMIC的面积为12.8×14.5 mm2。独创性/价值据作者所知,本工作报道了第一个覆盖0.2至2.2频率范围的全集成PA GHz,并实现最高增益的组合,约10 W输出功率,以及迄今为止所有已发表的GaN PA中最小的组件尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Circuit World
Circuit World 工程技术-材料科学:综合
CiteScore
2.60
自引率
0.00%
发文量
33
审稿时长
>12 weeks
期刊介绍: Circuit World is a platform for state of the art, technical papers and editorials in the areas of electronics circuit, component, assembly, and product design, manufacture, test, and use, including quality, reliability and safety. The journal comprises the multidisciplinary study of the various theories, methodologies, technologies, processes and applications relating to todays and future electronics. Circuit World provides a comprehensive and authoritative information source for research, application and current awareness purposes. Circuit World covers a broad range of topics, including: • Circuit theory, design methodology, analysis and simulation • Digital, analog, microwave and optoelectronic integrated circuits • Semiconductors, passives, connectors and sensors • Electronic packaging of components, assemblies and products • PCB design technologies and processes (controlled impedance, high-speed PCBs, laminates and lamination, laser processes and drilling, moulded interconnect devices, multilayer boards, optical PCBs, single- and double-sided boards, soldering and solderable finishes) • Design for X (including manufacturability, quality, reliability, maintainability, sustainment, safety, reuse, disposal) • Internet of Things (IoT).
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信