Analysis of a-Si:H/SiGe heterostructure solar cell

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-03-01 DOI:10.15251/jor.2023.192.165

L. Ayat, A. Idda

引用次数: 0

Abstract

In this paper we present the results of the numerical simulation using wx-AMPS1D software of a solar cell based on hydrogenated amorphous silicon (a-Si: H / c-SiGe), the top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell to obtain an efficiency high conversion rate. As the results, remarkable improvements on Voc, Jsc and FF have been achieved with the incorporation of n-c-SiGe layer, we achieved an efficiency of 11.93%.

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a-Si:H/SiGe异质结构太阳能电池分析

本文利用wx-AMPS1D软件对氢化非晶硅(a- si: H / c-SiGe)太阳能电池进行了数值模拟，结果表明，顶层的带隙最大，底层的带隙最小。这种设计允许较少能量的光子通过上层并被下层吸收，从而提高了太阳能电池的整体效率，从而获得高效率的高转换率。结果表明，n-c-SiGe层的加入对Voc、Jsc和FF都有显著的改善，效率达到11.93%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.