Theoretically Calculated Properties of a MOS Device on Gallium Oxide

Abstract

The properties of a MOS device on (100) oriented β-Ga2O3 semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in materials are related to the intrinsic Fermi energy levels in materials by the universal mass-energy equivalence equation given as dE/E = dm/m, where E is the energy and m is the free electron mass. The known parameters of isotropic electron effective mass of 0.27m and the bandgap of 4.8 eV for β-Ga2O3 semiconductor are utilized to determine the properties of the MOS device along with the parameter of threshold for electron heating in SiO2 as 2 MV/cm-eV.