{"title":"Polymeric sidewall transfer lithography","authors":"Yi-Chen Lo, Xing Cheng","doi":"10.1088/2399-6528/ac8f18","DOIUrl":null,"url":null,"abstract":"This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.","PeriodicalId":47089,"journal":{"name":"Journal of Physics Communications","volume":" ","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2399-6528/ac8f18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.