Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor

IF 2.7 3区工程技术 Q2 ENGINEERING, MECHANICAL

Nanoscale and Microscale Thermophysical Engineering Pub Date : 2018-05-03 DOI:10.1080/15567265.2018.1503382

Ke Chen, Xianghai Meng, Feng He, Yongjian Zhou, Jihoon Jeong, N. Sheehan, S. Bank, Yaguo Wang

{"title":"Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor","authors":"Ke Chen, Xianghai Meng, Feng He, Yongjian Zhou, Jihoon Jeong, N. Sheehan, S. Bank, Yaguo Wang","doi":"10.1080/15567265.2018.1503382","DOIUrl":null,"url":null,"abstract":"ABSTRACT Optical grating technique, where optical gratings are generated via light inference, has been widely used to measure charge carrier and phonon transport in semiconductors. In this paper, compared are three types of transient optical grating techniques: transient grating diffraction, transient grating heterodyne, and grating imaging, by utilizing them to measure carrier diffusion coefficient in a GaAs/AlAs superlattice. Theoretical models are constructed for each technique to extract the carrier diffusion coefficient, and the results from all three techniques are consistent. Our main findings are: (1) the transient transmission change ∆T/T0 obtained from transient grating heterodyne and grating imaging techniques are identical, even these two techniques originate from different detection principles; and (2) by adopting detection of transmission change (heterodyne amplification) instead of pure diffraction, the grating imaging technique (transient grating heterodyne) has overwhelming advantage in signal intensity than the transient grating diffraction, with a signal intensity ratio of 315:1 (157:1).","PeriodicalId":49784,"journal":{"name":"Nanoscale and Microscale Thermophysical Engineering","volume":"22 1","pages":"348 - 359"},"PeriodicalIF":2.7000,"publicationDate":"2018-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15567265.2018.1503382","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale and Microscale Thermophysical Engineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/15567265.2018.1503382","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}

引用次数: 1

Abstract

ABSTRACT Optical grating technique, where optical gratings are generated via light inference, has been widely used to measure charge carrier and phonon transport in semiconductors. In this paper, compared are three types of transient optical grating techniques: transient grating diffraction, transient grating heterodyne, and grating imaging, by utilizing them to measure carrier diffusion coefficient in a GaAs/AlAs superlattice. Theoretical models are constructed for each technique to extract the carrier diffusion coefficient, and the results from all three techniques are consistent. Our main findings are: (1) the transient transmission change ∆T/T0 obtained from transient grating heterodyne and grating imaging techniques are identical, even these two techniques originate from different detection principles; and (2) by adopting detection of transmission change (heterodyne amplification) instead of pure diffraction, the grating imaging technique (transient grating heterodyne) has overwhelming advantage in signal intensity than the transient grating diffraction, with a signal intensity ratio of 315:1 (157:1).

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光栅成像与瞬态光栅技术在半导体载流子扩散测量中的比较

摘要光栅技术通过光推理产生光栅，已被广泛用于测量半导体中的电荷载流子和声子输运。本文比较了三种瞬态光栅技术：瞬态光栅衍射、瞬态光栅外差和光栅成像，并利用它们测量GaAs/AlAs超晶格中的载流子扩散系数。对每种提取载流子扩散系数的方法都建立了理论模型，三种方法的结果是一致的。我们的主要发现是：（1）瞬态光栅外差和光栅成像技术获得的瞬态透射变化∆T/T0是相同的，即使这两种技术源于不同的检测原理；（2）光栅成像技术（瞬态光栅外差）采用透射变化检测（外差放大）代替纯衍射，在信号强度上比瞬态光栅衍射具有压倒性优势，信号强度比为315:1（157:1）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanoscale and Microscale Thermophysical Engineering 工程技术-材料科学：表征与测试

CiteScore

5.90

自引率

2.40%

发文量

审稿时长

3.3 months

期刊介绍： Nanoscale and Microscale Thermophysical Engineering is a journal covering the basic science and engineering of nanoscale and microscale energy and mass transport, conversion, and storage processes. In addition, the journal addresses the uses of these principles for device and system applications in the fields of energy, environment, information, medicine, and transportation. The journal publishes both original research articles and reviews of historical accounts, latest progresses, and future directions in this rapidly advancing field. Papers deal with such topics as: transport and interactions of electrons, phonons, photons, and spins in solids, interfacial energy transport and phase change processes, microscale and nanoscale fluid and mass transport and chemical reaction, molecular-level energy transport, storage, conversion, reaction, and phase transition, near field thermal radiation and plasmonic effects, ultrafast and high spatial resolution measurements, multi length and time scale modeling and computations, processing of nanostructured materials, including composites, micro and nanoscale manufacturing, energy conversion and storage devices and systems, thermal management devices and systems, microfluidic and nanofluidic devices and systems, molecular analysis devices and systems.