Photoinduced Modulation of the Dielectric Permittivity in a System of Interacting Quantum Dots in an External Electric Field

IF 1.1 4区 物理与天体物理 Q4 PHYSICS, APPLIED
V. D. Krevchik, A. V. Razumov, M. B. Semenov
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Abstract

At present, much attention is paid to the dielectric engineering of the material of the surrounding matrix and low-dimensional structures, which makes it possible to purposefully change their properties and optimize the characteristics of semiconductor devices. The aim of this work is a theoretical study of the influence of the pair interaction of quantum dots (QDs), as well as their interaction with the surrounding matrix through 2D dissipative tunneling, on the photodielectric effect (PDE) associated with the excitation of an impurity complex A+ + e in a QD system in an external electric field. Interaction of an electron with a hole in an impurity complex A+ + e in a QD has been considered in the adiabatic approximation. The dispersion equations for a hole in an impurity complex A+ + e in the presence of an external electric field and 2D dissipative tunneling for the s- and p-states of an electron in a QD are obtained within the framework of the zero-range potential model in the effective mass approximation. The influence of the electric field on the ground state of an electron in a QD has been taken into account in the second order of the perturbation theory. The probability of 2D dissipative tunneling is calculated in the one-instanton semiclassical approximation. The relative change in dielectric permittivity has been calculated in the dipole approximation. PDE field-dependence curves have been plotted for InSb QDs. It is shown that the PDE field dependence at a certain value of the strength of an external electric field and the parameters of 2D dissipative tunneling has a characteristic kink associated with the effect of 2D bifurcation, when, under the action of an electric field, the double-well oscillatory potential simulating the “QD–surrounding matrix” system is transformed and the tunnel transfer mode changes from synchronous to asynchronous. It has been established that there are irregular oscillations on the PDE curves in the vicinity of the 2D bifurcation point, which are associated with the regime of quantum beats. It is shown that the amplitude of the oscillations increases with increasing phonon mode frequency and temperature, while the break point shifts towards weaker fields. It has been found that an increase in the constant of interaction with the contact medium, as well as with the constant of the pair interaction of QDs, leads to the suppression of the PDE.

Abstract Image

外电场中相互作用量子点系统中介电常数的光致调制
目前,人们非常关注周围基质和低维结构材料的介电工程,这使得有目的地改变其性质和优化半导体器件的特性成为可能。本工作的目的是对量子点(QDs)的对相互作用的影响进行理论研究,以及它们通过二维耗散隧道与周围矩阵的相互作用,对光介电效应(PDE)的影响与外电场下QD系统中杂质复合物a++ e的激发有关。在绝热近似中考虑了QD中杂质络合物a + + e中电子与空穴的相互作用。在有效质量近似的零范围势模型的框架内,得到了外电场存在下杂质复合物a++ e中空穴的色散方程和量子点中电子s态和p态的二维耗散隧穿。在二阶微扰理论中考虑了电场对量子点中电子基态的影响。在一瞬半经典近似下,计算了二维耗散隧穿的概率。用偶极子近似计算了介电常数的相对变化。绘制了InSb量子点的PDE场依赖曲线。结果表明:在一定值下,电场强度与二维耗散隧道参数之间的PDE场依赖关系存在与二维分岔效应相关的特征结,在电场作用下,模拟“量子点包围矩阵”体系的双阱振荡势发生转换,隧道传输模式由同步转变为异步。在二维分岔点附近的PDE曲线上存在着与量子拍态有关的不规则振荡。结果表明,随着声子模频率和温度的增加,振荡幅度增大,而断点向弱场偏移。研究发现,随着与接触介质相互作用常数和量子点对相互作用常数的增加,PDE得到抑制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Technical Physics
Technical Physics 物理-物理:应用
CiteScore
1.30
自引率
14.30%
发文量
139
审稿时长
3-6 weeks
期刊介绍: Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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