Optoelectronic characterization of laser diodes with different electrode structures

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Circuit World Pub Date : 2022-02-15 DOI:10.1108/cw-08-2020-0193

Tao Lin, Ya-ning Li, R. Zhao, Zekun Ma, Jia-nan Xie

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引用次数: 0

Abstract

Purpose This paper aims to improve the device performance from the perspective of reducing ohmic contact resistance; the effects of different electrode structures and alloying parameters on the series resistance and power-current-voltage of laser diodes (LDs) have been investigated in this paper. Design/methodology/approach Four groups of p-GaAs side metal electrodes with different metal layer arrangements and thicknesses are fabricated for the investigated LDs. The investigated p-GaAs side electrodes are based on Ti/Pt/Au material and the n-GaAs side metal electrodes all have a same structure of Ni/Ge/Ni/Au/Ti/Pt/Au. The LDs with different electrodes were alloyed at 380°C for 60 s and 420°C for 80 s. Findings The experimental results show that the series resistance decreases by 14%–20%, the output power increases by 2%–2.2% and the conversion efficiency increases by 1.69%–2.16% for the LDs prepared with optimized alloying parameters (420°C for 80 s). The laser diode with p-GaAs side Ti/Pt/Au electrode of 30/70/100 nm has the best device characteristics under both annealing conditions. Originality/value The utilization of this improvement on ohmic contact property in electrode is not only very important for upgrading high-power LDs but also helpful for GaAs-based microelectronic devices such as HBT and monolithic microwave integrated circuit.

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不同电极结构激光二极管的光电特性

本文旨在从降低欧姆接触电阻的角度提高器件性能;本文研究了不同电极结构和合金参数对激光二极管串联电阻和功率电压的影响。设计/方法/方法制备了四组具有不同金属层排列和厚度的p-GaAs侧金属电极用于所研究的ld。所研究的p-GaAs侧电极均基于Ti/Pt/Au材料，n-GaAs侧电极均具有相同的Ni/Ge/Ni/Au/Ti/Pt/Au结构。不同电极的ld分别在380°C和420°C条件下合金化60 s和80 s。结果表明:采用优化的合金参数(420℃，80 s)制备的ld串联电阻降低14% ~ 20%，输出功率提高2% ~ 2.2%，转换效率提高1.69% ~ 2.16%。在两种退火条件下，p-GaAs侧Ti/Pt/Au电极为30/70/100 nm的激光二极管具有最佳的器件特性。利用这种电极欧姆接触特性的改进不仅对高功率ld的升级非常重要，而且对基于gaas的微电子器件(如HBT和单片微波集成电路)也有帮助。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Circuit World 工程技术-材料科学：综合

CiteScore

2.60

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Circuit World is a platform for state of the art, technical papers and editorials in the areas of electronics circuit, component, assembly, and product design, manufacture, test, and use, including quality, reliability and safety. The journal comprises the multidisciplinary study of the various theories, methodologies, technologies, processes and applications relating to todays and future electronics. Circuit World provides a comprehensive and authoritative information source for research, application and current awareness purposes. Circuit World covers a broad range of topics, including: • Circuit theory, design methodology, analysis and simulation • Digital, analog, microwave and optoelectronic integrated circuits • Semiconductors, passives, connectors and sensors • Electronic packaging of components, assemblies and products • PCB design technologies and processes (controlled impedance, high-speed PCBs, laminates and lamination, laser processes and drilling, moulded interconnect devices, multilayer boards, optical PCBs, single- and double-sided boards, soldering and solderable finishes) • Design for X (including manufacturability, quality, reliability, maintainability, sustainment, safety, reuse, disposal) • Internet of Things (IoT).