7‐1: A New a‐IGZO TFT Pixel Circuit for High‐Resolution Mobile AMOLED Display with Highly Stable at Low Gray Levels

Ji-Hwan Park, Kyeongsoo Kang, Jihoon Lee, Soo‐Yeon Lee
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引用次数: 1

Abstract

This paper proposes a highly stable amorphous indium‐gallium zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) pixel circuit for the active‐matrix organic light‐emitting diode (AMOLED) displays, which can compensate for the non‐uniform threshold voltage (VTH) of the TFT at a low gray level. The stable operation was achieved by minimizing the operation number of the switch connected to the VTH storage capacitor after the VTH compensation stage. The HSPICE simulation verified that the relative current error rate is within only ‐15.7% at 567 pA (13 gray level) against the VTH variations.
7-1:一种用于低灰度高度稳定的高分辨率移动AMOLED显示器的新型A-IGZO TFT像素电路
本文提出了一种用于有源矩阵有机发光二极管(AMOLED)显示器的高稳定非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFT)像素电路,该电路可以在低灰度下补偿TFT的非均匀阈值电压(VTH)。在VTH补偿阶段之后,通过最小化连接到VTH存储电容器的开关的操作次数来实现稳定操作。HSPICE模拟验证了在567pA(13灰度级)下,相对于VTH变化,相对电流误差率仅在-15.7%以内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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