Ji-Hwan Park, Kyeongsoo Kang, Jihoon Lee, Soo‐Yeon Lee
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引用次数: 1
Abstract
This paper proposes a highly stable amorphous indium‐gallium
zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) pixel circuit for
the active‐matrix organic light‐emitting diode (AMOLED)
displays, which can compensate for the non‐uniform threshold
voltage (VTH) of the TFT at a low gray level. The stable operation
was achieved by minimizing the operation number of the switch
connected to the VTH storage capacitor after the VTH
compensation stage. The HSPICE simulation verified that the
relative current error rate is within only ‐15.7% at 567 pA (13 gray
level) against the VTH variations.