The effect of substrate bias voltage on the adhesion strength of ta-C coated tools prepare by filtered cathode vacuum arc

IF 1 4区 工程技术 Q4 ENGINEERING, MECHANICAL
Y. Jang, Yong-jin Kang, Jong Kuk Kim
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引用次数: 2

Abstract

ta-C coating have found application for cutting tools. In this study, the effect of bias voltage on the physical properties of the coating and cutting performance were experimentally investigated. A bias voltages were applied with 0, 75, 150, 300 V and thicknesses were 430 nm. The results showed that the regardless of the bias voltage, the adhesion strength indicates that all ta-C coatings were HF 1. However, increasing bias voltage will increase the C = C boning at the coating, especially 150 and 300 V. Moreover, hardness values also decreased with increased bias voltage. For the cutting test, the ta-C coating from the lowest I(D)/I(G) value (0.5) with 75 V is selected. After cutting test, the adhesive of Al debris and delamination on the ta-C coated surface was three times lower than commercial DLC. This phenomenon shows that heat resistance of ta-C coating is dominant with high portion of sp3 fraction.
研究了衬底偏压对过滤阴极真空电弧制备的ta-C涂层刀具粘附强度的影响
ta-C涂层已被应用于切削工具。在本研究中,实验研究了偏压对涂层物理性能和切削性能的影响。施加0、75、150、300V的偏置电压,并且厚度为430nm。结果表明,无论偏压如何,ta-C涂层的附着力均为HF 1。然而,增加偏置电压将增加涂层处的C=C boning,特别是150和300V。此外,硬度值也随着偏置电压的增加而降低。对于切割测试,选择具有75V的最低I(D)/I(G)值(0.5)的ta-C涂层。切割测试后,铝碎片和分层在ta-C涂层表面上的粘附力比商业DLC低三倍。这一现象表明,ta-C涂层的耐热性占主导地位,sp3含量较高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.60
自引率
25.00%
发文量
21
审稿时长
>12 weeks
期刊介绍: IJSurfSE publishes refereed quality papers in the broad field of surface science and engineering including tribology, but with a special emphasis on the research and development in friction, wear, coatings and surface modification processes such as surface treatment, cladding, machining, polishing and grinding, across multiple scales from nanoscopic to macroscopic dimensions. High-integrity and high-performance surfaces of components have become a central research area in the professional community whose aim is to develop highly reliable ultra-precision devices.
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